Korea Electronics Co Ltd 2N2906E Datasheet
2002. 9. 17 1/4
SEMICONDUCTOR
TECHNICAL DATA
2N2906E
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: I
CEX
=-50nA(Max.), IBL=-50nA(Max.)
@V
CE
=-30V, VEB=-3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
: V
CE(sat)
=-0.4V(Max.) @IC=-50mA, IB=-5mA.
Low Collector Output Capacitance
: C
ob
=4.5pF(Max.) @VCB=5V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-40 V
Collector-Emitter Voltage
V
CEO
-40 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-200 mA
Base Current
I
B
-50 mA
Collector Power Dissipation
P
C
200 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* Total Rating
EQUIVALENT CIRCUIT (TOP VIEW)
B
B1
C
A
A1
C
H
1. Q EMITTER
1
2. Q BASE
1
3. Q BASE
2
4. Q COLLECTOR
2
5. Q EMITTER
2
6. Q COLLECTOR
1
1
2
3
P
6
DIM MILLIMETERS
5
D
4
P
J
_
A
1.6 0.05
+
_
A1
1.0 0.05
+
_
1.6 0.05
+
B
_
B1
1.2 0.05
+
C
0.50
_
+
0.2 0.05
D
_
+
0.5 0.05
H
_
+
0.12 0.05
J
P5
TES6
65 4
Q1
1
Marking
Q2
23
Type Name
Z A
2002. 9. 17 2/4Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CEX
VCE=-30V, VEB=-3V
- - -50 nA
Base Cut-off Current
I
BL
VCE=-30V, VEB=-3V
- - -50 nA
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=-10 A, IE=0
-40 - - V
Collector-Emitter Breakdown Voltage *
V
(BR)CEOIC
=-1mA, IB=0
-40 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=-10 A, IC=0
-5.0 - - V
DC Current Gain *
hFE(1) VCE=-1V, IC=-0.1mA
60 - -
hFE(2) VCE=-1V, IC=-1mA
80 - -
hFE(3) VCE=-1V, IC=-10mA
100 - 300
hFE(4) VCE=-1V, IC=-50mA
60 - -
hFE(5) VCE=-1V, IC=-100mA
30 - -
Collector-Emitter Saturation Voltage *
V
CE(sat)
1 IC=-10mA, IB=-1mA
- - -0.25
V
V
CE(sat)
2 IC=-50mA, IB=-5mA
- - -0.4
Base-Emitter Saturation Voltage *
V
BE(sat)
1 IC=-10mA, IB=-1mA
-0.65 - -0.85
V
V
BE(sat)
2 IC=-50mA, IB=-5mA
- - -0.95
Transition Frequency
f
T
VCE=-20V, IC=-10mA, f=100MHz
250 - - MHz
Collector Output Capacitance
C
ob
VCB=-5V, IE=0, f=1MHz
- - 4.5 pF
Input Capacitance
C
ib
VBE=-0.5V, IC=0, f=1MHz
- - 10 pF
Input Impedance
h
ie
VCE=-10V, IC=-1mA, f=1kHz
2.0 - 12
k
Voltage Feedback Ratio
h
re
1.0 - 10 x10
-4
Small-Signal Current Gain
h
fe
100 - 400
Collector Output Admittance
h
oe
3.0 - 60
Noise Figure NF
VCE=-5V, IC=-0.1mA,
Rg=1k , f=10Hz 15.7kHz
- - 4.0 dB
Switching Time
Delay Time
t
d
- - 35
nS
Rise Time
t
r
- - 35
Storage Time
t
stg
- - 225
Fall Time
t
f
- - 75
2N2906E
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
V
in
10kΩ
275Ω
V
C
Total 4pF
out
0.5V
-10.6V
V
in
9.1V
-10.9V
or equiv.
300ns
10kΩ
1N916
20µs
0
t ,t < 1ns, Du=2%
r
0
t ,t < 1ns, Du=2%
rf
V =-3.0V
CC
f
V
C
Total 4pF
275Ω
V =-3.0V
CC
out
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