Kingston KVR26S19D8-16 User Manual

Memory Module Specifi cations
KVR26S19D8/16
16GB 2Rx8 2G x 64-Bit PC4-2666 CL19 260-Pin SODIMM
DESCRIPTION
FEATURES
• Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP = 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
SPECIFICATIONS
CL(IDD) Row Cycle Time (tRCmin) Refresh to Active/Refresh
Command Time (tRFCmin) Row Active Time (tRASmin) Maximum Operating Power UL Rating Operating Temperature Storage Temperature
*Power will vary depending on the SDRAM used.
19 cycles
45.75ns(min.) 350ns(min.)
32ns(min.) TBD W* 94 V - 0
o
C to +85o C
0
o
C to +100o C
-55
• Dual-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.18” (30.00mm)
• RoHS Compliant and Halogen-Free
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Continued >>
Document No. VALUERAM1606B 05/04/18 Page 1
continued HyperX
MODULE DIMENSIONS
All measurements are in millimeters.
(Tolerances on all dimensions are ±0.12 unless otherwise specified)
The product images shown are for illustration purposes only and may not be an exact representation of the product. Kingston reserves the right to change any information at anytime without notice.
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3.7 Max
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Document No. VALUERAM1606B Page 2
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