Kingston KVR26N19S8-8 User Manual

Memory Module Specifi cations
KVR26N19S8/8
8GB 1Rx8 1G x 64-Bit PC4-2666 CL19 288-Pin DIMM
DESCRIPTION
FEATURES
• Power Supply: VDD=1.2V Typical
• VDDQ = 1.2V Typical
• VPP - 2.5V Typical
• VDDSPD=2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
SPECIFICATIONS
CL(IDD) Row Cycle Time (tRCmin) Refresh to Active/Refresh
Command Time (tRFCmin) Row Active Time (tRASmin) Maximum Operating Power UL Rating Operating Temperature Storage Temperature
*Power will vary depending on the SDRAM used.
19 cycles
45.75ns(min.) 350ns(min.)
32ns(min.) TBD W* 94 V - 0
o
C to +85o C
0
o
C to +100o C
-55
• Single-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.23” (31.25mm)
• RoHS Compliant and Halogen-Free
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Continued >>
Document No. VALUERAM1595-001.A00 06/09/17 Page 1
±
continued HyperX
MODULE DIMENSIONS
Front
3.00
Back
All measurements are in millimeters.
(Tolerances on all dimensions are ±0.12 unless otherwise specified)
133.35
129.55
2.10
±±0.15
31.25
Pin 1
0.15
3.35
2.70
28.90
The product images shown are for illustration purposes only and may not be an exact representation of the product. Kingston reserves the right to change any information at anytime without notice.
64.60
56.10
22.95
11.00
8.00
17.60
14.60
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Document No. VALUERAM1595-001.A00 Page 2
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