Kingston KVR26N19S6L-4 User Manual

Memory Module Specifi cations
KVR26N19S6L/4
4GB 1Rx16 512M x 64-Bit PC4-2666 CL19 VLP 288-Pin DIMM
DESCRIPTION
FEATURES
• Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP = 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
SPECIFICATIONS
CL(IDD)
Row Cycle Time (tRCmin)
Refresh to Active/Refresh Command Time (tRFCmin)
Row Active Time (tRASmin)
Maximum Operating Power
UL Rating
Operating Temperature
Storage Temperature
*Power will vary depending on the SDRAM used.
19 cycles
45.75ns(min.)
350ns(min.)
32ns(min.)
TBD W*
94 V - 0
o
C to +85o C
0
o
C to +100o C
-55
• Single-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 8 internal banks; 2 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 0.738” (18.75mm)
• RoHS Compliant and Halogen-Free
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Continued >>
Document No. VALUERAM1611A 01/22/19 Page 1
continued HyperX
MODULE DIMENSIONS
1
288 145
All measurements are in millimeters.
(Tolerances on all dimensions are ±0.12 unless otherwise specified)
145
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Document No. VALUERAM1611A Page 2
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