Memory Module Specifi cations
KVR16S11S6/2
2GB 1Rx16 256M x 64-Bit PC3-12800
CL11 204-Pin SODIMM
DESCRIPTION
This document describes ValueRAM's 256M x 64-bit (2GB) DDR3-1600 CL11 SDRAM (Synchronous DRAM) 1Rx16, memory module, based on four 256M x 16-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1600 timing of 11-11-11 at 1.5V. This 204-pin SODIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:
SPECIFICATIONS
CL(IDD) |
11 cycles |
Row Cycle Time (tRCmin) |
48.125ns (min.) |
Refresh to Active/Refresh |
260ns (min.) |
Command Time (tRFCmin) |
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Row Active Time (tRASmin) |
35ns (min.) |
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Maximum Operating Power |
1.170 W* |
UL Rating |
94 V - 0 |
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Operating Temperature |
0o C to 85o C |
FEATURES
•JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
•VDDQ = 1.5V (1.425V ~ 1.575V)
•800MHz fCK for 1600Mb/sec/pin
•8 independent internal bank
•Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5
•Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
•8-bit pre-fetch
•Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
Storage Temperature |
-55o C to +100o C |
*Power will vary depending on the SDRAM used.
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Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
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On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
PCB : Height 1.180” (30.00mm), single sided component
Continued >>
Document No. VALUERAM1370-001.A00 11/12/13 Page 1
MODULE DIMENSIONS:
(units = millimeters)
Document No. VALUERAM1370-001.A00 Page 2