Kingston KVR13S9S8-4 User Manual
Memory Module Specifi cations
KVR13S9S8/4
4GB 1Rx8 512M x 64-Bit PC3-10600
CL9 204-Pin SODIMM
DESCRIPTION
This document describes ValueRAM's 512M x 64-bit (4GB)
DDR3-1333 CL9 SDRAM (Synchronous DRAM), 1Rx8 memory
module, based on eight 512M x 8-bit DDR3-1333 FBGA components. The SPD is programmed to JEDEC standard latency
DDR3-1333 timing of 9-9-9 at 1.5V. This 204-pin SODIMM uses
gold contact fingers. The electrical and mechanical specifications are as follows:
FEATURES
• JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 667MHz fCK for 1333Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
• 8-bit pre-fetch
SPECIFICATIONS
CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active/Refresh 260ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 36ns (min.)
Power (Operating) 1.980 W*
UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C
*Power will vary depending on the SDRAM used.
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB: Height 1.18” (30mm), double sided component
Continued >>
Document No. VALUERAM1243-001.A00 06/28/12 Page 1
MODULE DIMENSIONS:
(units = millimeters)
Document No. VALUERAM1243-001.A00 Page 2
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