Kingston KVR13N9S8HK2-8 User Manual

Memory Module Specifi cations

KVR13N9S8HK2/8

8GB (4GB 1Rx8 512M x 64-Bit x 2 pcs.)
PC3-10600 CL9 240-Pin DIMM Kit

DESCRIPTION

ValueRAM's KVR13N9S8HK2/8 is a kit of two 512M x 64-bit
(4GB) DDR3-1333 CL9 SDRAM (Synchronous DRAM), 1Rx8,
memory modules, based on eight 512M x 8-bit FBGA compo­nents per module. Total kit capacity is 8GB. The SPDs are
programmed to JEDEC standard latency DDR3-1333 timing of
9-9-9 at 1.5V. Each 240-pin DIMM uses gold contact fingers.
The electrical and mechanical specifications are as follows:

FEATURES

• JEDEC standard 1.5V (1.425V ~1.575V) Power Supply

• VDDQ = 1.5V (1.425V ~ 1.575V)

• 667MHz fCK for 1333Mb/sec/pin

• 8 independent internal bank

• Programmable CAS Latency: 9, 8, 7, 6

• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

• Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)

• 8-bit pre-fetch

SPECIFICATIONS

CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active/Refresh 260ns (min.)

Command Time (tRFCmin)
Row Active Time (tRASmin) 36ns (min.)
Maximum Operating Power 2.100 W* (per module)

UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C

*Power will vary depending on the SDRAM used.

• Burst Length: 8 (Interleave without any limit, sequential with

starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]

• Bi-directional Differential Data Strobe

• Internal(self) calibration : Internal self calibration through ZQ

pin (RZQ : 240 ohm ± 1%)

• On Die Termination using ODT pin

• Average Refresh Period 7.8us at lower than TCASE 85°C,

3.9us at 85°C < TCASE < 95°C

• Asynchronous Reset

• PCB: Height 1.18” (30mm), single sided component

Continued >>

Document No. VALUERAM1278-001.A00 02/06/13 Page 1

MODULE DIMENSIONS:

TECHNOLOGY

30.00

18.80

15.80

11.00

8.00

0.00

Units: millimeters

0.00

133.35

54.70

Document No. VALUERAM1278-001.A00 Page 2