kingston KVR1333D3LS4R9S-4GI User Manual

Memory Module Specifi cations
KVR1333D3LS4R9S/4GI
4GB 1Rx4 512M x 72-Bit PC3-10600 CL9 Registered w/Parity 240-Pin DIMM
DESCRIPTION
This document describes ValueRAM's 512M x 72-bit (4GB) DDR3L-1333 CL9 SDRAM (Synchronous DRAM), low voltage,
®
Intel memory module, based on eighteen 512M x 4-bit DDR3L-1333 FBGA components. The SPD is programmed to JEDEC stan­dard latency DDR3-1333 timing of 9-9-9 at 1.5V. This 240-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:
FEATURES
JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~
1.575V) Power Supply
VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
667MHz fCK for 1333Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 9, 8, 7, 6
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
SPECIFICATIONS
CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh 160ns (min.)
Command Time (tRFCmin) Row Active Time (tRASmin) 36ns (min.) Power (Operating) (1.35V) = TBD*
(1.50V) = TBD* UL Rating 94 V - 0 Operating Temperature 0o C to 85o C Storage Temperature -55o C to +100o C
*Power will vary depending on the SDRAM and Register/PLL used.
Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
On-DIMM thermal sensor (Grade B)
Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE
< 95°C
Asynchronous Reset
PCB : Height 1.180” (30.00mm), double sided component
Continued >>
Document No. VALUERAM1027-001.A00 10/31/11 Page 1
MODULE DIMENSIONS:
(units = millimeters)
Document No. VALUERAM1027-001.A00 Page 2
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