Kingston KVR1333D3D8R9S-4GHB User Manual

Memory Module Specification

KVR1333D3D8R9S/4GHB

4GB 512M x 72-Bit PC3-10600

CL9 Registered w/Parity 240-Pin DIMM

DESCRIPTION:

This document describes ValueRAM's 512M x 72-bit (4GB) DDR3-1333MHz CL9 SDRAM (Synchronous DRAM)
registered w/parity, dual-rank memory module, based on eighteen 256M x 8-bit DDR3-1333MHz FBGA components.
The SPD is programmed to JEDEC standard latency 1333MHz timing of 9-9-9 at 1.5V. This 240-pin DIMM uses gold
contact fingers and requires +1.5V. The electrical and mechanical specifications are as follows:

FEATURES:

JEDEC standard 1.5V ± 0.075V Power Supply
VDDQ = 1.5V ± 0.075V
667MHz fCK for 1333Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 6,7,8,9,10
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4
which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal (self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
On-DIMM thermal sensor (Grade B)
Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE . 95°C
Asynchronous Reset

PCB : Height 1.180” (30.00mm), double sided component

PERFORMANCE:

CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active/Refresh Command Time (tRFCmin) 160ns (min.)
Row Active Time (tRASmin) 36ns (min.)
Power 2.812 W (operating)
UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C

DRAM SUPPORTED:

Hynix B-Die

Document No. VALUERAM0948-001.A00

12/06/10

Page 1

MODULE DIMENSIONS:

ValueRAM

(units = millimeters)

Document No. VALUERAM0948-001.A00 Page 2