Memory Module Specifi cations
KVR1333D3D8R9S/4G
4GB 2Rx8 512M x 72-Bit PC3-10600
CL9 Registered w/Parity 240-Pin DIMM
DESCRIPTION
This document describes ValueRAM's 512M x 72-bit (4GB)
DDR3-1333 CL9 SDRAM (Synchronous DRAM), registered w/
parity, 2Rx8, ECC memory module, based on eighteen
256M x 8-bit DDR3-1333 FBGA components. The SPD is
programmed to JEDEC standard latency DDR3-1333 timing of
9-9-9 at 1.5V.This 240-pin DIMM uses gold contact fingers. The
electrical and mechanical specifications are as follows:
FEATURES
• JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 667MHz fCK for 1333Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
• 8-bit pre-fetch
SPECIFICATIONS
CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active/Refresh 160ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 36ns (min.)
Power (Operating) 2.812 W*
UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C
*Power will vary depending on the SDRAM and
Register/PLL used.
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• On-DIMM thermal sensor (Grade B)
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE
< 95°C
• Asynchronous Reset
• PCB : Height 1.180” (30.00mm), double sided component
Continued >>
Document No. VALUERAM0869-001.B00 09/08/11 Page 1
MODULE DIMENSIONS:
(units = millimeters)
Document No. VALUERAM0869-001.A00 Page 2