Kingston KVR1066D3E7S4G User Manual

Memory Module Specification
KVR1066D3E7S/4G
4GB 512M x 72-Bit PC3-8500
CL7 ECC 240-Pin DIMM
DESCRIPTION:
FEATURES:
JEDEC standard 1.5V ± 0.075V Power Supply VDDQ = 1.5V ± 0.075V 533MHz fCK for 1066Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 5,6,7,8,9 Posted CAS Programmable Additive Latency: 0, CL - 2, or CL - 1 clock Programmable CAS Write Latency(CWL) = 6(DDR3-1066) 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%) On Die Termination using ODT pin On-DIMM thermal sensor (Grade B) Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE . 95°C Asynchronous Reset
PCB : Height 1.180” (30.00mm), double sided component
PERFORMANCE:
CL(IDD) 7 cycles Row Cycle Time (tRCmin) 50.625ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 160ns Row Active Time (tRASmin) 37.5ns (min.) Power 1.485 W (operating) UL Rating 94 V - 0 Operating Temperature 0o C to 85o C Storage Temperature -55o C to +100o C
Document No. VALUERAM0803-001.A00
06/16/09
Page 1
MODULE DIMENSIONS:
ValueRAM
30.00
18.80
15.80
11.00
8.00
0.00
TECHNOLOGY
Units: millimeters
0.00
133.35
54.70
Document No. VALUERAM0803-001.A00 Page 2
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