Kingston KSM32ES8-8ME User Manual

Memory Module Specifi cations
KSM32ES8/8ME
8GB 1Rx8 1G x 72-Bit PC4-3200 CL22 288-Pin DIMM
DESCRIPTION
FEATURES
• Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP = 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
SPECIFICATIONS
CL(IDD)
Row Cycle Time (tRCmin)
Refresh to Active/Refresh Command Time (tRFCmin)
Row Active Time (tRASmin)
Maximum Operating Power
UL Rating
Operating Temperature
Storage Temperature
*See IDD Specifications (page 2)
Module Assembly
DRAM: MICRON (E-DIE)
22 cycles
45.75ns(min.)
350ns(min.)
32ns(min.)
*
94 V - 0
o
C to +85o C
0
o
C to +100o C
-55
• On-die VREFDQ generation and calibration
• Single-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• Temperature sensor with integrated SPD
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.23” (31.25mm)
• RoHS Compliant and Halogen-Free
kingston.com
Continued >>
Document No. 4809404A 05/04/20 Page 1
IDD Specifications
Symbol 3200 Units
I
DD0
I
PP0
I
DD1
I
DD2N
I
DD2NT
I
DD2P
I
DD2Q
I
DD3N
I
PP3N
I
DD3P
I
DD4R
I
DD4W
I
DD5R
I
PP5R
I
DD6N
I
DD6E
I
DD6R
I
DD6A
I
DD6A
I
DD6A
I
PP6X
I
DD7
I
PP7
I
DD8
423
27
567
297
396
198
234
387
27
297
1602
1350
450
45
306
522
189
77.4
189
279
45
1701
117
162
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
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Document No. 4809404A Page 2
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