Memory Module Specifi cations
KSM32ED8/16ME
16GB 2Rx8 2G x 72-Bit PC4-3200
CL19 288-Pin DIMM
DESCRIPTION
Kingston's KSM32ED8/16ME is a 2G x 72-bit (16GB) DDR4-3200
CL22 SDRAM (Synchronous DRAM), 2Rx8, ECC, memory module,
based on eighteen 1G x 8-bit FBGA components. The SPD is
programmed to JEDEC standard latency DDR4-3200 timing of
22-22-22 at 1.2V. Each 288-pin DIMM uses gold contact fingers. The
electrical and mechanical specifications are as follows:
FEATURES
• Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP = 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
SPECIFICATIONS
CL(IDD)
Row Cycle Time (tRCmin)
Refresh to Active/Refresh
Command Time (tRFCmin)
Row Active Time (tRASmin)
Maximum Operating Power
UL Rating
Operating Temperature
Storage Temperature
*See IDD Specifications (page 2)
Module Assembly
DRAM: MICRON (E-DIE)
22 cycles
45.75ns(min.)
350ns(min.)
32ns(min.)
*
94 V - 0
o
C to +85o C
0
o
C to +100o C
-55
• On-die VREFDQ generation and calibration
• Dual-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• Temperature sensor with integrated SPD
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.23” (31.25mm)
• RoHS Compliant and Halogen-Free
kingston.com
Continued >>
Document No. 4809405B 06/21/20 Page 1
IDD Specifications
Symbol 3200 Units
I
DD0
I
PP0
I
DD1
I
DD2N
I
DD2NT
I
DD2P
I
DD2Q
I
DD3N
I
PP3N
I
DD3P
I
DD4R
I
DD4W
I
DD5R
I
PP5R
I
DD6N
I
DD6E
I
DD6R
I
DD6A
I
DD6A
I
DD6A
I
PP6X
I
DD7
I
PP7
I
DD8
738
54
846
666
765
450
540
1008
54
774
1827
1620
819
72
612
828
378
154.8
378
558
90
1971
162
450
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
kingston.com
Document No. 4809405B Page 2