Kingston KSM32ED8-16HD Technical data

Memory Module Specifi cations
KSM32ED8/16HD
16GB 2Rx8 2G x 72-Bit PC4-3200 CL22 288-Pin DIMM
DESCRIPTION
FEATURES
• Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP = 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
SPECIFICATIONS
CL(IDD)
Row Cycle Time (tRCmin)
Refresh to Active/Refresh Command Time (tRFCmin)
Row Active Time (tRASmin)
Maximum Operating Power
UL Rating
Operating Temperature
Storage Temperature
*See IDD Specifications (page 2)
Module Assembly
DRAM: HYNIX (D-DIE)
22 cycles
45.75ns(min.)
350ns(min.)
32ns(min.)
*
94 V - 0
o
C to +85o C
0
o
C to +100o C
-55
• On-die VREFDQ generation and calibration
• Dual-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• Temperature sensor with integrated SPD
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.23” (31.25mm)
• RoHS Compliant and Halogen-Free
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Continued >>
Document No. 4809636B 08/12/20 Page 1
IDD Specifications
Symbol
IDD0
IDD0A
IDD1 IDD1A IDD2N
IDD2NA IDD2NT
IDD2NL IDD2NG IDD2ND
IDD2NP
IDD2P IDD2Q IDD3N
IDD3NA
IDD3P
IDD4R IDD4RA IDD4RB
IDD4W IDD4WA IDD4WB IDD4WC IDD4WP
IDD5B IDD5F2 IDD5F4
IDD6N
IDD6E
IDD6R
IDD6A
IDD7 IDD8
IDD
3200
560 561 629 657 502 504 590 348 499 480 507 335 427 536 536
407 1294 1323 1310 1277 1323 1196 1250 1473 2000 1512 1366
338
466
218
466 1434
176
unit
mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA
Symbol
IPP0
IPP1 IPP2N IPP2P IPP3N IPP3P IPP4R
IPP4W
IPP5B
IPP5F2 IPP5F4
IPP6N IPP6E IPP6R IPP6A
IPP7
IPP8
IPP
3200
76 84 61
56 243 241 181 180 503 339 297
93 125
74 125 175
59
unit
mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA
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Document No. 4809636B Page 2
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