Kingston KSM29ES8-16ME User Manual

Memory Module Specifi cations
KSM29ES8/16ME
16GB 1Rx8 2G x 72-Bit PC4-2933 CL21 288-Pin DIMM
DESCRIPTION
FEATURES
• Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP = 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
SPECIFICATIONS
CL(IDD)
Row Cycle Time (tRCmin)
Refresh to Active/Refresh Command Time (tRFCmin)
Row Active Time (tRASmin)
Maximum Operating Power
UL Rating
Operating Temperature
Storage Temperature
*See IDD Specifications (page 2)
Module Assembly
DRAM: MICRON (E-DIE)
21 cycles
45.75ns(min.)
350ns(min.)
32ns(min.)
*
94 V - 0
o
C to +85o C
0
o
C to +100o C
-55
• On-die VREFDQ generation and calibration
• Single-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• Temperature sensor with integrated SPD
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.23” (31.25mm)
• RoHS Compliant and Halogen-Free
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Continued >>
Document No. 4809553A 07/28/20 Page 1
IDD Specifications
Symbol 2933 Units
I
DD0
I
PP0
I
DD1
I
DD2N
I
DD2NT
I
DD2P
I
DD2Q
I
DD3N
I
PP3N
I
DD3P
I
DD4R
I
DD4W
I
DD5R
I
PP5R
I
DD6N
I
DD6E
I
DD6R
I
DD6A (25°C)
I
DD6A (45°C)
I
DD6A (75°C)
I
DD6A (95°C)
I
PP6X
I
DD7
I
PP7
I
DD8
531
27
630
396
450
342
378
540
18
441
1386
1107
612
36
477
1017
180
99
180
459
1017
54
1647
72
324
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
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Document No. 4809553A Page 2
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