Kingston KSM26ED8-32ME User Manual

Memory Module Specifi cations
KSM26ED8/32ME
32GB 2Rx8 4G x 72-Bit PC4-2666 CL19 288-Pin DIMM
DESCRIPTION
FEATURES
• Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP = 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
SPECIFICATIONS
CL(IDD)
Row Cycle Time (tRCmin)
Refresh to Active/Refresh Command Time (tRFCmin)
Row Active Time (tRASmin)
Maximum Operating Power
UL Rating
Operating Temperature
Storage Temperature
*See IDD Specifications (page 2)
Module Assembly
DRAM: MICRON (E-DIE)
19 cycles
45.75ns(min.)
350ns(min.)
32ns(min.)
*
94 V - 0
o
C to +85o C
0
o
C to +100o C
-55
• On-die VREFDQ generation and calibration
• Dual-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• Temperature sensor with integrated SPD
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.23” (31.25mm)
• RoHS Compliant and Halogen-Free
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Continued >>
Document No. 4809589A 07/28/20 Page 1
IDD Specifications
Symbol 2666 Units
I
DD0
I
PP0
I
DD1
I
DD2N
I
DD2NT
I
DD2P
I
DD2Q
I
DD3N
I
PP3N
I
DD3P
I
DD4R
I
DD4W
I
DD5R
I
PP5R
I
DD6N
I
DD6E
I
DD6R
I
DD6A (25°C)
I
DD6A (45°C)
I
DD6A (75°C)
I
DD6A (95°C)
I
PP6X
I
DD7
I
PP7
I
DD8
864
45
963
774
783
684
756
1062
36
864
1656
1395
954
54
684
2034
360
198
360
918
2034
954
1971
90
648
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
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Document No. 4809589A Page 2
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