Kingston KHX1600C9AD3-1G User Manual

TECHNOLOGY

Memory Module Specification

KHX1600C9AD3/1G

1GB 128M x 64-Bit DDR3-1600MHz

CL9 240-Pin DIMM

DESCRIPTION:

This document describes Kingston's 128M x 64-bit 1GB (1024MB) DDR3-1600MHz CL9 SDRAM (Synchronous
DRAM) memory module, based on eight 128M x 8-bit DDR3 FBGA components. This module has been tested to run
at DDR3-1600MHz at a low latency timing of 9-9-9-27 at 1.65V. The SPD is programmed to JEDEC standard latency
DDR3-1333MHz timing of 9-9-9 at 1.5V. This 240-pin DIMM uses gold contact fingers and requires +1.5V. The JEDEC
standard electrical and mechanical specifications are as follows:

FEATURES:

JEDEC standard 1.5V ± 0.075V Power Supply
VDDQ = 1.5V ± 0.075V
667MHz fCK for 1333Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 5,6,7,8,9,10
Posted CAS
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
Programmable CAS Write Latency(CWL) = 7(DDR3-1333)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4
which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE . 95°C
Asynchronous Reset

PCB : Height 1.180” (30.00mm), single sided component

Y

G

O

L

O

N

H

C

E

T

PERFORMANCE:

CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active/Refresh Command Time (tRFCmin) 110ns
Row Active Time (tRASmin) 36ns (min.)
Power 1.080 W (operating)
UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C

Document No. 4805802-001.A00

10/02/10

Page 1

MODULE DIMENSIONS:

TECHNO L O GY

ValueRAM

30.00

18.80

15.80

11.00

8.00

0.00

Units: millimeters

0.00

133.35

54.70

TECHNOLOGY

Document No. 4805802-001.A00 Page 2