Kingston KHX1333C7D3B1K2-4GX, KHX1333C7D3B1K4GX User Manual

TECHNOLOGY
Memory Module Specification
KHX1333C7D3B1K2/4GX
4GB (2GB 256M x 64-Bit x 2 pcs.) DDR3-1333MHz
CL7 240-Pin DIMM Kit
DESCRIPTION:
FEATURES:
JEDEC standard 1.5V ± 0.075V Power Supply VDDQ = 1.5V ± 0.075V 667MHz fCK for 1333Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 5,6,7,8,9,10 Posted CAS Programmable Additive Latency: 0, CL - 2, or CL - 1 clock Programmable CAS Write Latency(CWL) = 7(DDR3-1333) 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE . 95°C Asynchronous Reset
PCB : Height 1.180” (30.00mm), double sided component
PERFORMANCE:
CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 110ns Row Active Time (tRASmin) 36ns (min.) Power 1.800 W (operating per module) UL Rating 94 V - 0 Operating Temperature 0o C to 85o C Storage Temperature -55o C to +100o C
Document No. 4805607-001.A00
05/21/10
Page 1
MODULE DIMENSIONS:
TECHNO L O GY
ValueRAM
30.00
18.80
15.80
11.00
8.00
0.00
Units: millimeters
0.00
w/ Heatsink Assembly
133.35
54.70
Document No. 4805607-001.A00 Page 2
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