KINGBRIGHT L34F4C, L34F4BT, L34F3BT, L34F3C Datasheet
SPEC NO:CDA0542 REV NO: V.1 DATE: OCT/29/2001 PAGE: 1 OF 4
APPROVED: J.LU CHECKED: DRAWN:X.Q.ZHENG
L34F3C L34F3BT
L34SF4C L34SF4BT
T-1 (3mm) INFRA-RED EMITTING DIODES
Package Dimensions
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.25(0.01") unless otherwise noted.
3. Lead spacing is measured where the lead emerge package.
4. Specifications are subject to change without notice.
Description
F3 Made with Gallium Arsenide Infrared Emitting diodes.
SF 4 Made wi th G allium Aluminum Arsenide Infrared
Emitting diodes.
Features
!MECHANICALLY AND SPECTRALLY MATCHED
TO THE L32P3C PHOTOTRANSISTOR.
!BOTH WATER CLEAR LENS AND BLUE TRANSPARENT
LENS AVAILABLE HIGH POWER OUTPUT.
SPEC NO:CDA0542 REV NO: V.1 DATE: OCT/29/2001 PAGE: 2 OF 4
APPROVED: J.LU CHECKED: DRAWN:X.Q.ZHENG
Electrical / Optical Characteristics at T)=25
°°
°°
°C
Absolute Maximum Ratings at T)=25
°°
°°
°C
Notes:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.
2. 4mm below package base.
Selection Guide
Note:
1. θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value.
metImetI
metI
metImetIN/PN/P
N/P
N/PN/PlobmySlobmyS
lobmyS
lobmySlobmyS.pyT.pyT
.pyT
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.xaM
.xaM.xaMtinUtinU
tinU
tinUtinUnoitidnoCnoitidnoC
noitidnoC
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3F
4FS
V
F
2.1
3.1
5.1
7.1
VAm02=FI
tnerruCesreveR
3F
4FS
I
R
-
01
01
AuV5=RV
ecnaticapaCnoitcnuJ
3F
4FS
C
09
09
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htgnelevaWlartcepSkaeP
3F
4FS
λP
049
088
-mnAm02=FI
htdiwdnaBlartcepS
3F
4FS
λ∆
05
05
-mnAm02=FI
metImetI
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metImetIlobmySlobmyS
lobmyS
lobmySlobmyS4FS&3F4FS&3F
4FS&3F
4FS&3F4FS&3FstinUstinU
stinU
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tnerruCdrawroFI
F
05Am
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P
2.1A
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R
5V
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A
58+~04-
°C
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°C
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2/1θ22/1θ2
2/1θ2
2/1θ22/1θ2
C3F43LsAaGRAELCRETAW20150205 °
TB3F43LsAaGTNERAPSNARTEULB 258 0205 °
C4FS43LsAlAaGRAELCRETAW20150205 °
TB4FS43LsAlAaGTNERAPSNARTEULB2480205 °
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