PHOTOTRANSISTOR
AP3216P3C
Features
MECHANICALLY AND SPECTRALLY MATCHED TO
THE AP3216 SERIES INFRARED EMITTING LED LAMP.
WATER CLEAR LENS.
PACKAGE : 2000PCS / REEL.
RoHS COMPLIANT.
Package Dimensions
Description
Made with NPN silicon phototransistor chips.
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.2(0.008") unless otherwise noted.
3. Specifications are subject to change without notice.
SPEC NO: DSAB4397 REV NO: V.4 DATE: MAR/02/2005 PAGE: 1 OF 3
APPROVED: J. Lu CHECKED: Allen Liu DRAWN: B.H.LI ERP: 1203000370
Electrical / Optical Characteristics at TA=25°C
Symbol Parameter Min. Typ. Max. Units Test Conditions
VBR CEO Collector-to-Emitter Breakdown Voltage 30 - - V
VBR ECO Emitter-to-Collector Breakdown Voltage 5 - - V
VCE (SAT) Collector-to-Emitter Saturation Voltage - - 0.8 V
I CEO Collector Dark Current - - 100 nA
TR
TF
Rise Time (10% to 90% )
Fall Time (90% to 10% )
- 3 - us
- 3 - us
I (ON) On State Collector Current 0.1 0.3 - mA
2θ1/2
Viewing Angle - 120 - deg -
IC=100uA
Ee=0mW/cm
IE=100uA
Ee=0mW/cm
IC=2mA
Ee=20mW/cm
VCE=10V
Ee=0mW/cm
VCE = 5V
I
C=1mA
RL=1000Ω
VCE = 5V,
Ee=1mW/cm
λ=940nm
2
2
2
2
2
,
Absolute Maximum Ratings at T
A=25°C
Parameter Max.Ratings
Collector-to-Emitter Breakdown Voltage 30V
Emitter-to-Collector Breakdown Voltage 5V
Power Dissipation at (or below) 25°C Free Air Temperature 100mW
Operating Temperature Range -40°C ~ +85°C
Storage Temperature Range -40°C ~ +85°C
SPEC NO: DSAB4397 REV NO: V.4 DATE: MAR/02/2005 PAGE: 2 OF 3
APPROVED: J. Lu CHECKED: Allen Liu DRAWN: B.H.LI ERP: 1203000370