Kingbright AP 2012 P Service Manual

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PHOTOTRANSISTOR

AP2012P3C

Features

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MECHANICALLY AND SPECTRALLY MATCHED TO

THE AP2012 SERIES INFRARED EMITTING LED LAMP.

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WATER CLEAR LENS.

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PACKAGE : 2000PCS / REEL.

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RoHS COMPLIANT.

Package Dimensions

Description

Made with NPN silicon phototransistor chips.

Notes:

1. All dimensions are in millimeters (inches).

2. Tolerance is ±0.1(0.004") unless otherwise noted.

3. Specifications are subject to change without notice.

SPEC NO: DSAF1594 REV NO: V.2 DATE: MAR/29/2005 PAGE: 1 OF 4
APPROVED: J. Lu CHECKED: Allen Liu DRAWN: B.H.LI ERP:1203000140

www.DataSheet4U.com

Electrical / Optical Characteristics at TA=25°C

Symbol Parameter Min. Typ. Max. Units Test Conditions

VBR CEO Collector-to-Emitter Breakdown Voltage 30 - - V

IC=100uA

Ee=0mW/cm

2

VBR ECO Emitter-to-Collector Breakdown Voltage 5 - - V

VCE (SAT) Collector-to-Emitter Saturation Voltage - - 0.8 V

I CEO Collector Dark Current - - 100 nA

TR

TF

Rise Time (10％ to 90％ )

Fall Time (90％ to 10％ )

- 3 - us

- 3 - us

I (ON) On State Collector Current 0.1 0.3 - mA

2θ1/2

Viewing Angle - 120 - deg -

IE=100uA

Ee=0mW/cm

IC=2mA

Ee=20mW/cm

VCE=10V

Ee=0mW/cm

VCE = 5V

I

C=1mA

RL=1000Ω

VCE = 5V,

Ee=1mW/cm

λ=940nm

2

2

2

2

,

Absolute Maximum Ratings at T

A=25°C

Parameter Max.Ratings

Collector-to-Emitter Breakdown Voltage 30V
Emitter-to-Collector Breakdown Voltage 5V

Power Dissipation at (or below) 25°C Free Air Temperature 100mW
Operating Temperature Range -40°C ~ +85°C
Storage Temperature Range -40°C ~ +85°C

SPEC NO: DSAF1594 REV NO: V.2 DATE: MAR/29/2005 PAGE: 2 OF 4
APPROVED: J. Lu CHECKED: Allen Liu DRAWN: B.H.LI ERP:1203000140