
Keysight Technologies
HSCH-9161 HSCH-9162
GaAs Detector Diode
Data Sheet
Features
– Low junction capacitance
– fc > 200 GHz
– Lower temperature coef cient than
silicon
– Durable construction
Typical 6 gram beam lead strength
High power handling capability

02 | Keysight | HSCH-9161 HSCH-9162 GaA s Detector Diode – Data Sheet
Description
The HSCH-916x is a discrete, beam lead, Ga As diode fabricated using the modied barrier
integrated diode (MBID) process.
Absolute Maximum Ratings
Symbol Parameters/conditions Typ. Min. Max. Units
Top Operating temperature range –65 150 °C
T
Storage temperature range –65 200 °C
stg
P
B
Burnout power 20 dBm
DC Specications/Physical Properties
(TA = 25 °C)
Junction
Part number
HSCH-9161 0.035 2.5 7.5 0.5 3 Grams
HSCH-9162 0.035 1.8 7.5 0.5 3 Grams
capacitance (pF)
Typ. Min. Max. Min. Typ. Max. Unit
Video
resistance (kΩ)
Voltage sensitivity
strength (mV/μW)
Beam lead strength
200

03 | Keysight | HSCH-9161 HSCH-9162 GaA s Detector Diode – Data Sheet
Figure 3. Diode parameter variation with temperatureFigure 2. Typical diode IV characteristic
Figure 4. DC measurement assumes 50 Ω load; ideal diode would be 1 mV/μW Figure 5. Rv = Rj + Rs
1. Note: Each graph line represents a different value of RV or gamma at room temperature.

04 | Keysight | HSCH-9161 HSCH-9162 GaA s Detector Diode – Data Sheet
Applications
This diode is suitable for medium-low barrier, zero bias detector applications. The
HSCH-916x is functional through W–band (110 GHz) and can be mounted in microstrip,
nline, and coplanar circuits.
Assembly Techniques
Diodes are ESD sensitive. ESD preventive measures must be employed in all aspects of
storage, handling, and assembly. Diode ESD precautions, handling considerations, and
bonding methods are critical factors in successful diode performance and reliability.
Beam Lead Diode Bonding and Handling Procedures, Application Note (5991-3513EN)
provides basic information on these subjects.
Typical small signal parameters as a function of bias
Parameter Bias voltage
–4.0 V Zero bias +0.1 V +0.5 V
Rs(Ω) 20 20 20 20
Rj(Ω) 440 3000 277 34
Cj(pF) 0.019 0.035 0.027 0.034
Note: Parameter values extracted from 26–40 GHz S–parameter data at –20 dBm.
Notes
This data sheet contains a variety of
typical and guaranteed performance
data. The information supplied should
not be interpreted as a complete list
of circuit specications. Customers
considering the use of this, or other
TCA GaAs ICs, for their design
should obtain the current production
specications from Keysight
Technologies, Inc.. In this data sheet
the term typical refers to the 50th
percentile performance. For additional
information and support email: mmic_
[email protected].

05 | Keysight | HSCH-9161 HSCH-9162 GaA s Detector Diode – Data Sheet
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© Keysight Technologies, 2013 - 2014
Published in USA, August 3, 2014
5989-6228EN
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