Keysight HMMC-5027 Datasheet

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Keysight Technologies

HMMC-5027 2 to 26.5 GHz

Medium Power Amplier

IGG7-8002 Data Sheet

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02 | Keysight | HMMC-5027 2 to 26.5 GHz Medium Power Amplier - Data Sheet

Description

The HMMC-5027 is a broadband GaAs MMIC traveling wave amplier designed for medium output power and moderate gain over the full 2 to 26.5 GHz frequency range. Seven MES-FET cascode stages provide a at gain response, making the HMMC-5027 an ideal wideband power block. Optical lithography is used to produce gate lengths of ≈0.5 μm. The HMMC-5027 incorporates advanced MBE technology, Ti-Pt-Au gate metallization, silicon nitride passivation, and polyimide for scratch protection.

Chip size 2980 × 770 μm (117.3 × 30.3 mils)

Chip size tolerance ± 10 μm (± 0.4 mils)

Chip thickness 127 ± 15 μm (5 ± 0.6 mils)

Pad dimensions 75 × 75 μm (2.95 × 2.95 mils), or larger

Features

– Wide-frequency range:

2 to 26.5 GHz

– Moderate gain:

7 dB

– Gain atness:

± 1 dB

– Return loss:

Input: –13 dB, Output: –11 dB

– Low-frequency operation capability:

< 2 GHz

– Gain control:

30 dB dynamic range

– Moderate power:

20 GHz:

P P

26.5 GHz: P P

: 22 dBm

–1 dB

: 24 dBm

sat

: 19 dBm

–1 dB

: 21 dBm

sat

Absolute Maximum Ratings

Symbol Parameters/conditions Min Max Units

case

stg

max

Positive drain voltage 8.0 Volts

Total drain current 300 mA

First gate voltage –5 0 Volts

First gate current –1 +1 mA

Second gate voltage –2.5 +5 Volts

Second gate current –25 mA

DC power dissipation 2.4 Watts

CW input power 23 dBm

Operating channel temp. +150 ºC

Operating case temp. –55 ºC

Storage temperature –65 +165 ºC

Maximum assembly temp.

300 ºC

(for 60 seconds maximum)

1. Operation in excess of any one of these conditions may result in permanent damage to this device. TA = 25 °C except for T

, T

, and T

stg

max

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03 | Keysight | HMMC-5027 2 to 26.5 GHz Medium Power Amplier - Data Sheet

DC Specications/Physical Properties

Symbol Parameters/conditions Min Typ Max Units

IDSS Saturated drain current (V

IDSOFF (V

ch–bs

1. Measured in wafer form with T

RF Specications

First gate pinch-off voltage (VDD = 8.0 V, IDD = 30 mA, VG2 = open circuit) –2.2 –1.3 –0.5 volts

Second gate self-bias voltage (VDD = 8.0 V, VG1 = 0.0 V)

) First gate pinch-off current (VDD = 8.0 V, VG1 = –3.5 V, VG2 = open circuit) 7 mA

) Second gate pinch-off current (VDD = 5.0 V, VG1 = 0.0 V, VG2 = –3.5 V) 10 mA

Thermal resistance (T

chuck

(VDD = 8.0 V, IDD(Q) = 250 mA or I

Symbol Parameters/conditions

= 8.0 V, VG1 = 0.0 V, VG2 = open circuit) 200 300 500 mA

1.8 (0.27 × V

= 25 °C) 28 °C/W

backside

= 25 °C. (except θ

, Zin = Zo = 50 Ω)

DSS

ch–bs

)

Min Typ Max Units

volts

BW Guaranteed bandwidth2 2 26.5 GHz

S21 Small signal gain 6 7 dB

ΔS21 Small signal gain atness ±0.8 dB

RLin Input return loss –13 –10 dB

RLout Output return loss –11 –10 dB

S12 Reverse isolation –28 –25 dB

P–1 dB Output power at 1 dB gain compression 16.5 19 dBm

Psat Saturated output power 18.5 21 dBm

Second harm. (2 < ƒo < 20), [Po(ƒo) = 21 dBm or P–1 dB, whichever is less]

Third harm. (2 < ƒo < 20), [Po(ƒo) = 21 dBm or P–1 dB, whichever is less]

–21 –18 dBc

–32 –18 dBc

NF Noise gure 11 dB

1. Small-signal data measured in wafer form with Tchuck = 25 °C. Large-signal data measured on individual devices mounted in an 83040 Series Modular Microcircuit Package @ TA = 25 °C.

2. Performance may be extended to lower frequencies through the use of appropriate of f-chip circuitry. Upper corner frequency –30 GHz.

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04 | Keysight | HMMC-5027 2 to 26.5 GHz Medium Power Amplier - Data Sheet

Applications

The HMMC-5027 series of traveling wave ampliers are designed for use as general purpose wideband power stages in communication systems and microwave instrumentation.

They are ideally suited for broadband applications requiring a at gain response and excellent port matches over a 2 to 26.5 GHz frequency range. Dynamic gain control and low-frequency extension capabilities are designed into these devices.

Biasing and Operation

These ampliers are biased with a single positive drain supply (VDD) and a single negative

gate supply (V I

= 250 mA or I

biased between 0 V and –0.6 V. No other bias supplies or connections to the device are

required for 2 to 26.5 GHz operation. The gate voltage (V

drain voltage (V

down. See Figure 3 for assembly information.

The HMMC-5027 is a DC coupled amplier. External coupling capacitors are needed on

and RF

the lowest operating frequency.

). The recommended bias conditions for the HMMC-5027 are VDD = 8.0 V,

, whichever is less. To achieve this drain current level, VG1 is typically

DSS

) MUST be applied prior to the

) during power up and removed after the drain voltage during power

ports. The drain bias pad is connected to RF and must be decoupled to

OUT

The auxiliary gate and drain contacts are provided when performance below 1 GHz is required. Connect external capacitors to ground to maintain input and output VSWR at low frequencies (see Additional References). Do not apply bias to these pads.

The second gate (V

) can be used to obtain 30 dB (typical) dynamic gain control. For

normal operation, no external bias is required on this contact and its selfbias potential is

between +1.5 and +2.5 volts. Applying an external bias between its open circuit potential

and –2.5 volts will adjust the gain while maintaining a good input/output por t match.

Assembly Techniques

GaAs MMICs are ESD sensitive. ESD preventive measures must be employed in all as-

pects of storage, handling, and assembly.

MMIC ESD precautions, handling considerations, die attach and bonding methods are critical factors in successful GaAs MMIC performance and reliability.

GaAs MMIC ESD, Die Attach and Bonding Guidelines - Application Note, 5991-348 4EN provides basic information on these subjects.

Additional References:

TC700/702 Traveling Wave Amplier Environmental Data - Technical Overview, 5991-3553EN

GaAs MMIC TWA Users Guide - Application Note, 5991-3545EN

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05 | Keysight | HMMC-5027 2 to 26.5 GHz Medium Power Amplier - Data Sheet

Figure 1. Schematic

Figure 2. Bond pad locations

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06 | Keysight | HMMC-5027 2 to 26.5 GHz Medium Power Amplier - Data Sheet

Figure 3. Assembly diagram (for 2.0 to 26.5 GHz operation)

Figure 4. Typical gain and reverse isolation vs. frequency Figure 5. Typical input and output return loss vs. frequency

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07 | Keysight | HMMC-5027 2 to 26.5 GHz Medium Power Amplier - Data Sheet

Typical S–Parameters

= 25 °C, VDD = 8.0 V, IDD = 250 mA or I

chuck

, whichever is less, Zin = Z

DSS

= 50 Ω)

out

Freq. S11 S12 S21 S22

(GHz) dB Mag Ang dB Mag Ang dB Mag Ang dB Mag Ang

2.0 –18.7 0 .116 –139 . 5 –57.7 0.0013 –165.2 8.7 2.717 116.6 –13 .0 0.223 173.5

3.0 –2 0.1 0.099 –159. 0 –54.9 0.0018 144.2 8.4 2.635 94.8 –13 . 0 0.224 150.0

4.0 –21.5 0.084 –175 .7 –52.0 0.0025 154.0 8.3 2.612 72.0 –13.5 0.212 12 7.1

5.0 –24.6 0.059 167.8 –49.9 0.0032 111.3 8.4 2.634 48.2 –14.0 0.200 101.6

6.0 –32.0 0.025 16 7.4 –48.2 0.0039 91.3 8.6 2.699 23.3 –15.3 0 .17 1 71.7

7.0 –30.8 0.029 –94.8 –46.9 0.0045 74.9 8.8 2.763 –3.5 –16 .9 0 .14 3 39.5

8.0 –22.7 0.073 –103 . 2 –45.5 0.0053 21.0 8.8 2.768 –30.9 –18. 4 0.120 – 2.2

9.0 –18.9 0.114 –121.5 –45.2 0.0055 10.3 8.8 2.74 4 –58.9 –21.3 0.086 –46.9

10.0 –17. 2 0.137 –142.6 –44.7 0.0058 –15.5 8.5 2.673 –85.9 –18. 9 0.114 –90.7

11.0 –17.4 0 .13 5 –16 3.9 –43.5 0.0067 –33.4 8.3 2.608 –112.5 –17.9 0.127 –129.6

12.0 –19.3 0 .10 8 175.6 – 41.5 0.0084 –45.4 8.2 2.564 –138. 5 –18.2 0 .12 3 –162.6

13.0 –25.6 0.052 170.3 –40.6 0.0093 –75.8 8.2 2.578 –16 4.9 –19 . 3 0.10 8 163.4

14.0 –2 7. 0 0.045 –113.0 –38.6 0.0118 –95.9 8.3 2.610 167.1 –22.1 0.078 126.5

15.0 –19.2 0.109 –111. 0 –37.8 0.0129 –124 .7 8.3 2.605 138.4 –31.2 0.028 56.7

16.0 –15.6 0.16 7 –127.9 –37.1 0.0139 –149.1 8.2 2. 574 108.8 –23.5 0.067 –33.3

17. 0 –14.3 0.19 3 –14 8.4 –36.3 0.0153 –174.5 8.0 2.510 79.7 –18.1 0.124 –80.7

18.0 –14.8 0 .18 2 –16 6.6 –35.8 0.0163 16 4.1 7. 8 2.444 50.9 –15 . 2 0.174 –115.2

19.0 –17.1 0.14 0 –179. 3 –34.7 0.0185 141.5 7.7 2.418 22.1 –13.7 0.207 –147. 6

20.0 –21. 4 0.086 –166.2 –32.9 0.0227 112.6 7.8 2.466 –7.5 –13 . 9 0.202 17 7. 9

21.0 –18.4 0.121 –129. 5 –31.6 0.0262 80.7 8.1 2.527 –39.9 –16.8 0.14 5 136.7

22.0 –13.8 0.205 –137.2 –30.9 0.0285 42.7 8.0 2.512 –74.0 –25.3 0.054 66.9

23.0 –12.1 0.247 –152.7 –30.6 0.0296 13.3 7.6 2.395 –10 8 .4 –19 . 8 0.10 2 –56.2

24.0 –12.3 0.24 4 –169 . 8 –30.3 0.0304 –15.5 7.4 2.344 –142.5 –13.7 0.207 –103. 5

25.0 –14 .7 0.184 –175. 8 –29.7 0.0329 –44.9 7.3 2.315 –175.6 –11.3 0.272 –136.7

26.0 –16.7 0 .146 –14 9.3 –28.5 0.0375 –78.1 7.9 2.469 148.1 –11.7 0.259 –171.3

26.5 –14.1 0 .197 –141.6 –28.0 0.0399 –98.5 8.0 2.503 126.9 –13.0 0.223 172.3

1. Data obtained from on-wafer measurements.

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08 | Keysight | HMMC-5027 2 to 26.5 GHz Medium Power Amplier - Data Sheet

Figure 6. Typical small-signal gain vs. temperature

Figure 8. Typical 1 dB gain compression and saturated output power

vs. frequency

Figure 7. Typical gain vs. second gate control voltage

Figure 9. Typical second and third harmonics vs. fundamental frequency at

Pout = +21 dBm

Figure 10. Typical noise gure performance

Notes

All data measured on individual devices mounted in an 83040 Series Modular Microcircuit Package @ TA = 25 °C (except where

noted).

This data sheet contains a variety of typical and guaranteed performance data. The information supplied should not be interpreted as a complete list of circuit specications. Customers considering the use of this, or other Keysight Technologies Inc. TCA GaAs ICs, for their design should obtain the current production specications from Keysight TCA Marketing. In this data sheet the term typical refers to the 50th percentile performance. For additional information contact Keysight TCA Marketing at 707-577-4482.

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09 | Keysight | HMMC-5027 2 to 26.5 GHz Medium Power Amplier - Data Sheet

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This information is subject to change without notice. © Keysight Technologies, 2013 - 2014 Published in USA, August 3, 2014 5989-6208EN

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