Keysight HMMC-5025 Datasheet

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Keysight Technologies

HMMC-5025 2-50 GHz

Distributed Amplier

1GG6-8000

Data Sheet

Features

– Frequency range: 2-50 GHz – Small signal gain:

8.5 dB – P

– Noise gure:

5 dB @ 2-35 GHz 7 dB @ 35-50 GHz – Return loss: In/out: < –10 dB – 30 dB gain control

@ 40 GHz: 12 dBm

–1 dB

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02 | Keysight | HMMC-5025 2-5 0 GHz Dis tributed Amplier – Data Sheet

Description

The HMMC-5025 was designed as a generic wide band distributed amplier, covering the frequency span 2-50 GHz. It consists of seven stages. Each stage is made up of two cascaded FETs with gate peripheries of 48 μm per FET. Both input and output ports were designed to provide 50 Ohm terminations. Bonding pads are provided in the layout to allow amplier operation at frequencies lower than 2 GHz by means of external circuit components.

The amplier is biased with a single positive drain supply (VDD) and a single negative gate supply (VG1). A second gate connection is provided for external gain control applications.

Chip Size:

1720 × 920 μm (67.7 × 36.2 mils)

Chip Size Tolerance:

±10 μm (±0.4 mils)

Chip Thickness:

127 ± 15 μm (5 ±0.6 mils)

Pad Dimensions:

80 × 80 μm (3.2 × 3.2 mils)

Absolute Maximum Ratings

Symbol Parameters/conditions Min. Max. Units

Positive drain voltage 7.0 volts

Total drain current 170 mA

First gate voltage –3.5 0 volts

Second gate voltage –3.0 +3.0 volts

PDC power DC power dissipation 1.2 watts

case

stg

max

CW input power 20 dBm

Operating channel temperature 150 °C

Operating case temperature –55 °C

Storage temperature –65 165 °C

Maximum assembly temperature (for 60 seconds maximum) 300 °C

1. Operation in excess of any one of these conditions may result in permanent damage to this device. TA = 25 °C except for Tch, T

stg

, and T

max

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03 | Keysight | HMMC-5025 2-5 0 GHz Dis tributed Amplier – Data Sheet

DC Specifications/Physical Properties

Symbol Parameters/conditions Min. Typ. Max. Units

DSS

DSOFF(VG1

DSOFF(VG2

ch-bs

) First gate pinch-off current (VDD = 5.0 V, VG1 = –3.5 V, VG2 = open circuit) 6 10 mA

) Second gate pinch-off current (VDD = 5.0 V, IDD = 75 mA, VG2 = –2.5 V) 10 mA

Saturated drain current (VDD = 5.0 V, VG1 = 0.0 V, VG2 = open circuit) 130 150 170 mA

First gate pinch-off voltage (VDD = 5.0 V, IDD = 15 mA, VG2 = open circuit) –1.7 –0.5 Volts

Second gate self-bias voltage (VDD = 5.0 V, IDD = 75 mA) 2 Volts

Thermal resistance (T

= 25 °C) 63 °C/Watt

backside

1. Measured in wafer form with T

RF Specications

= 25 °C. (Except Θ

chuck

ch-bs

)

(VDD = 5.0 V, IDD(Q) = 75 mA, Zin = Zo = 50 Ω)

Symbol Parameters/conditions Min. Typ. Max. Units

BW Guaranteed bandwidth

2 50 GHz

Gain Small signal gain 7.0 8.5 dB

∆Gain Small signal gain atness ±0.75 ±1.5 dB

out

Input return loss 10 15 dB

Output return loss 10 15 dB

Isolation Reverse isolation 20 30 dB

–1 dB

sat

Output power at 1 dB gain Compression @ 40 GHz 12 dBm

Saturated output power @ 40 GHz 16 dBm

Second harmonic (2 < ƒo< 26) (Po(ƒo) = 10 dBm –35 dBc

Third harmonic (2 < ƒo< 26) (Po(ƒo) = 10 dBm –25 dBc

NF Noise gure (2-35 GHz) 5.0 dB

NF Noise gure (35-50 GHz) 7.0 dB

1. Small-signal data measured in wafer form with T

2. Performance may be extended to lower frequencies through the use of appropriate off-chip circuitry.

= 25 °C. Harmonic data measured on individual device mounted in a microcircuit package @ TA = 25 °C.

chuck

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04 | Keysight | HMMC-5025 2-5 0 GHz Dis tributed Amplier – Data Sheet

Applications

The HMMC-5025 traveling wave amplier is designed for use as a general purpose wideband power stage in communication systems, and microwave instrumentation, and optical systems. It is ideally suited for broadband applications requiring a at gain response and excellent port matches over a 2 to 50 GHz frequency range. Dynamic gain control and lowfrequency ex tension capabilities are designed into these devices.

It is characteristic of traveling wave ampliers that S22 tends to 0 dB and greater out

of band. This is the design trade-off for the broadband performance of TWAs. As a

consequence, TWAs are not necessarily uncondtionally stable out of band. This means that if a TWA is followed by a reective low-pass lter, oscillations can occur. This phenomenon is exacerbated by low temperature where the gain is higher. More data will follow on individual devices.

Biasing and Operation

The recommended bias conditions for best performance for the HMMC- 5025 are VDD =

5.0 V, IDD = 75 mA. To achieve these drain current levels, VG1 is typically biased between –0.2 V and –0.6 V. No other bias supplies or connections to the device are required for 2 to 50 GHz operation. The gate voltage (VG1) should be applied prior to the drain voltage (VDD) during power up and removed after the drain voltage during power down.

The HMMC-5025 is a DC coupled amplier. External coupling capacitors are needed on

RFIN and RF the lowest operating frequency.

The auxiliary gate and drain contacts are provided when performance below 1 GHz is required. Connect external capacitors to ground to maintain input and output VSWR at low frequencies (see Additional References). Do not apply bias to these pads.

The second gate (VG2) can be used to obtain 30 dB (typical) dynamic gain control. For normal operation, no external bias is required on this contact.

ports. The drain bias pad is connected to RF and must be decoupled to

OUT

Assembly Techniques

GaAs MMICs are ESD sensitive. ESD preventive measures must be employed in all aspects of storage, handling, and assembly.

MMIC ESD precautions, handling considerations, die attach and bonding methods are

critical factors in successful GaAs MMIC performance and reliability.

Keysite Technologies application note, GaAs MMIC ESD, Die Attach and Bonding Guidelines (literature number 5991- 3484EN) provides basic information on these

subjects.

Additional References:

Keysite Technologies application note, GaAs MMIC TWA Users Guide (literature number 5991-3545EN).

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05 | Keysight | HMMC-5025 2-5 0 GHz Dis tributed Amplier – Data Sheet

Low frequency

extension

Aux drain

8.5

RF input

Figure 1. Schematic

470

340

GND

Drain

bias

1.5

Seven similar stages

Gate bias

350

9.2

RF output

8.5

Low frequency

extension

Second gate

bias

Aux gate

920 (±10)

Aux. drain

RF input

(Aux V

844

234

314

pad) (VDD)

114 (RF input)

280

(GND pad)

Chip ID no.

1720 (±10)

1160

)

RF output

Aux. 2nd gate bias

Aux. gate bias

1625

(RF output)

668

258

1630 (Aux gate and Aux 2nd gate)

Figure 2. Bond pad locations

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06 | Keysight | HMMC-5025 2-5 0 GHz Dis tributed Amplier – Data Sheet

Input return loss (dB)

Drain bias must be decoupled from RF to lowest operating frequency. (AN #56).

100 pF

4 ηH inductor for operation to 2 GHz (200 mil bond wire).

Gate is decoupled from RF, (Bond wire length not important)

Figure 3. Assembly diagram

VDD = 5.0 V, IDD = 75 mA

Gain

Small – signal gain (dB)

2 6 10 14 18 22 26 30 34 38 42 46 50

(1)

Isolation

Frequency (GHz)

Figure 4. Typical Gain and Reverse isolation vs. Frequency

Reverse isolation (dB)

Figure 5. Typical Input and Output return loss vs. Frequency

VDD = 5.0 V, IDD = 75 mA

(1)

Output

Input

45 2 6 10 14 18 22 26 30 34 38 42 46 50

Frequency (GHz)

Output return loss (dB)

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07 | Keysight | HMMC-5025 2-5 0 GHz Dis tributed Amplier – Data Sheet

Typical S–Parameters

= 25 °C, VDD = 5.0 V, I

chuck

Freq. (GHz)

= 75 mA, Zin = Zo = 50 Ω)

dB Mag Ang dB Mag Ang dB Mag Ang dB Mag Ang

2 –24.6 0.059 –150.2 –52.0 0.0025 –110.2 8.5 2.660 147.8 –26.1 0.049 –64.0 3 –29.7 0.033 147.5 –49.1 0.0035 –130.2 8.4 2.630 139.6 –33.8 0.020 –23.6 4 –28.9 0.036 89.0 –47.1 0.004 4 –146.4 8.4 2.630 129.8 –30.1 0.031 43.9 5 –27.0 0.045 56.2 –45.5 0.0053 –161.6 8.4 2.629 119.5 –24.6 0.059 55.9 6 –25.8 0.052 32.6 –4 4.2 0.0061 –176.8 8.4 2.643 108.9 –20.8 0.091 52.1 7 –25.2 0.055 12.7 –43.3 0.0068 169.3 8.5 2.668 98.1 –18.4 0.121 43.8 8 –25.4 0.054 –6.3 –42.6 0.0074 155.6 8.6 2.705 86.9 –16.7 0.147 33.4 9 –26.0 0.050 –25.3 –42.1 0.0078 143.8 8.8 2.743 75.5 –15.6 0.166 22.3 10 –27.4 0.043 –46.3 –41.7 0.0083 132.1 8.9 2.787 63.7 –15.0 0.178 10.7 11 –29.4 0.034 –70.4 –41.4 0.0085 121.9 9.0 2.823 51.6 –14.8 0.182 –0.9 12 –31.7 0.026 –102.9 –40.9 0.0090 112.3 9.1 2.853 39.3 –14.9 0.179 –12.6 13 –33.0 0.022 –145.8 –40.7 0.0093 104.5 9.2 2.874 26.9 –15.4 0.169 –24.2 14 –31.4 0.027 168.6 –40.3 0.0097 95.4 9.2 2.891 14.3 –16.3 0.153 –35.7 15 –29.1 0.035 136.8 –39.7 0.0104 88.5 9.2 2.891 1.8 –17.6 0.131 –47.3 16 –27.0 0.045 113.4 –39.0 0.0112 80.5 9.2 2.884 –10.8 –19.5 0.106 –59.3 17 –25.4 0.053 95.4 –38.4 0.0120 71.9 9.2 2.870 –23.3 –22.2 0.077 –72.0 18 –24.5 0.060 77.9 –37.7 0.0131 62.9 9.1 2.853 –35.7 –26.7 0.046 –86.1 19 –24.1 0.062 62.1 –37.1 0.0140 53.8 9.1 2.836 –48.1 –35.6 0.017 –114.9 20 –24.4 0.061 48.2 –36.3 0.0153 4 4.3 9.0 2.819 –60.3 –35.3 0.017 107.2 21 –25.0 0.056 37.0 –35.3 0.0172 32.7 9.0 2.806 –72.6 –27.0 0.045 80.0 22 –25.6 0.052 22.6 –35.1 0.0176 19.5 8.9 2.798 –84.7 –23.2 0.069 66.2 23 –27.7 0.041 7.2 –34.7 0.0184 8.9 8.9 2.796 –97.1 –21.0 0.089 54.9 24 –30.9 0.028 –8.2 –34.4 0.0191 –2.8 8.9 2.789 –109.5 –19.4 0.107 4 4.2 25 –38.4 0.012 –39.5 –34.3 0.0194 –14.7 8.9 2.789 –121.9 –18.6 0.118 33.6 26 –40.1 0.010 –169.3 –33.9 0.0202 –25.3 8.9 2.789 –134.5 –18.2 0.124 24.2 27 –30.9 0.029 156.0 –33.7 0.0206 –37.0 8.9 2.794 –147.2 –18.2 0.124 15.5 28 –26.0 0.050 138.6 –33.7 0.0206 –48.5 8.9 2.795 –160.1 –18.4 0.120 7.7 29 –23.1 0.070 122.8 –33.4 0.0213 –58.3 8.9 2.787 –173.1 –18.8 0.115 2.1 30 –21.0 0.089 110.2 –33.3 0.0216 –71.3 8.9 2.780 174.0 –19.6 0.105 –3.4 31 –19.8 0.102 95.3 –32.9 0.0228 –81.1 8.9 2.772 160.9 –20.5 0.095 –7.5 32 –18.9 0.114 82.3 –32.5 0.0236 –93.6 8.8 2.768 147.8 –21.3 0.086 –9.1 33 –18.6 0.117 70.4 –32.3 0.024 4 –105.4 8.8 2.762 134.5 –22.4 0.076 –6.4 34 –18.5 0.118 58.6 –32.3 0.024 4 –120.3 8.8 2.752 121.2 –23.0 0.071 –4.7 35 –19.0 0.112 46.2 –31.9 0.0254 –132.8 8.8 2.747 107.8 –23.5 0.067 –3.5 36 –20.0 0.100 35.6 –31.6 0.0264 –146.2 8.8 2.741 94.4 –23.7 0.066 –2.5 37 –21.5 0.084 26.4 –31.5 0.0266 –161.5 8.7 2.735 80.7 –24.4 0.060 –4.3 38 –24.0 0.063 18.8 –31.5 0.0267 –175.1 8.7 2.728 67.0 –25.4 0.054 –8.9 39 –27.6 0.042 18.9 –31.5 0.0266 171.1 8.7 2.723 53.0 –27.1 0.04 4 –11.8 40 –32.9 0.023 46.7 –31.4 0.0270 157.6 8.7 2.711 39.0 –30.4 0.030 –9.1 41 –30.3 0.031 99.2 –31.2 0.0276 140.9 8.6 2.703 24.8 –38.1 0.012 18.9 42 –25.5 0.053 107.1 –31.0 0.0282 125.0 8.6 2.695 10.5 –32.6 0.023 93.1 43 –22.2 0.078 102.7 –31.4 0.0270 115.6 8.6 2.689 –4.0 –26.2 0.049 94.9 4 4 –20.1 0.099 94.4 –31.1 0.0280 101.4 8.6 2.679 –18.1 –22.4 0.076 86.4 45 –19.0 0.112 85.3 –31.3 0.0272 87.2 8.5 2.672 –33.4 –20.2 0.098 75.3 46 –18.6 0.117 76.5 –30.5 0.0297 72.1 8.5 2.676 –48.5 –18.8 0.115 61.6 47 –18.3 0.121 69.8 –30.6 0.0297 49.9 8.6 2.686 –64.0 –18.0 0.126 48.2 48 –18.8 0.115 62.5 –30.7 0.0293 37.8 8.6 2.689 –79.8 –18.3 0.122 28.8 49 –19.3 0.108 59.9 –30.5 0.0300 20.0 8.6 2.691 –96.1 –19.5 0.106 6.1 50 –20.3 0.096 58.9 –30.3 0.0307 2.7 8.6 2.677 –293.0 –21.7 0.082 –22.7

1. Data obtained from on-wafer measurements.

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08 | Keysight | HMMC-5025 2-5 0 GHz Dis tributed Amplier – Data Sheet

Small–signal gain, S

(dB)

)

Additional Performance Characteristics

(VDD = 5.0 V, IDD = 75 mA)

(dB)

.019 dB/°C

Small–signal gain, S

.029 dB/°C

.039 dB/°C

(°C)

-55

-25

+25

+55

+85

+100

2 6 10 14 18 22 26 30 34 38 42 46 50

Frequency (GHz)

Figure 6. Typical Small-signal gain vs. Temperature Figure 7. Typical Gain vs. Second gate control voltage

(VDD = 5.0 V, V

-0.66 V)

-10

-20

-30 2 6 10 14 18 22 26 30 34 38 42 46 50

Frequency (GHz

VG2

(V)

+2.0

-1.0

-1.5

-2.0

-2.5

-3.0

IDD

(mA)

(VDD = 5.0 V, I

(Q) = 75 mA)

Output power (dBm)

2 6 10 14 18 22 26 30 34 38 42 46 50

Frequency (GHz)

Figure 8. Typical 1 dB Gain compression and Saturated

output power vs. Frequency

Noise ﬁgure (dB)

2 4 6 8 10 12 14 16 18 20 22 24 26.5

Nominal Bias:

= 5.0 V, IDD = 75 mA)

Optimal NF Bias:

= 2.25 V, IDD = 26 mA)

Frequency (GHz)

Figure 10. Typical Noise gure performance vs. Frequency

P(sat) P(-1 dB)

Associated gain (dB)

(VDD = 5.0 V, I

-10

-15

-20

-25

-30

-35

-40

Harmonics (dBc)

-45

-50

-55

-60 2 3 4 5 6 7 8 9 10 11 12 13 14

2nd Harm. 3rd Harm.

(Q) = 75 mA)

Fundamental frequency, ƒo (GHz)

Figure 9. Typical Second and Third harmonics vs.

Fundamental frequency at P

= 10 dBm

out

Notes

All data measured on individual devices mounted in a 50 GHz test

package TA = 25 °C (except where noted).

This data sheet contains a variety of typical and guaranteed

performance data. The information supplied should not be

interpreted as a complete list of circuit specications. Customers considering the use of this, or other TCA GaAs ICs, for their design should obtain the current production specications from Keysight Technologies, Inc.. In this data sheet the term

typical refers to the 50th percentile performance. For additional information and support email: [email protected].

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09 | Keysight | HMMC-5025 2-5 0 GHz Dis tributed Amplier – Data Sheet

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