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Keysight HMMC-1002
DC–50 GHz Variable Attenuator
1GG7-8001
Data Sheet
Features
– Specied frequency range:
DC to 26.5 GHz
– Return loss: 10 dB
– Minimum attenuation: 2.0 dB
– Maximum attenuation: 30.0 dB
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02 | Keysight | HMMC-1002 DC–50 GHz Variable Attenuator - Data Sheet
Description
The HMMC-1002 is a monolithic, voltage variable, GaAs IC attenuator that operates
from DC to 50 GHz. It is fabricated using WPTC’s MMICB process which features an MBE
epitaxial layer, backside ground vias, and FET gate lengths of approximately 0.4 µm. The
variable resistive elements of the HMMC-1002 are two 750 µm wide series FETs and four
200 µm wide shunt FETs. The distributed topology of the HMMC-1002 minimizes the
parasitic effects of its series and shunt FETs, allowing the HMMC-1002 to exhibit a wide
dynamic range across its full bandwidth. An on-chip DC reference circuit may be used
to maintain optimum VSWR for any attenuation setting or to improve the attenuation
versus voltage linearity of the attenuator circuit.
Absolute Maximum Ratings
Symbol Parameters/conditions Minimum Maximum Units
1
Chip size:
1470 x 610 µm (57.9 x 24.0 mils)
Chip size tolerance:
±10 µm (±0.4 mils)
Chip thickness:
127 ± 15 µm (5.0 ± 0.6 mils)
RF pad dimensions:
60 x 70 µm (2.4 x 2.8 mils) or larger
DC pad dimensions:
75 x 75 µm (3.0 x 3.0 mils) or larger
V
V
V
V
P
T
T
T
T
DC-RF
1
2
DC
in
mina
maxa
stg
max
DC voltage to RF ports –0.6 +1.6 Volts
V1 control voltage –5.0 +0.5 Volts
V2 control voltage –5.0 +0.5 Volts
DC in/DC out –0.6 +1.0 Volts
RF input power 17 dBm
Minimum ambient operating temperature –55 °C
Maximum ambient operating temperature +125 °C
Storage temperature –65 +165 °C
Maximum assembly temperature
+300 °C
(for 60 seconds maximum)
1. Operation in excess of any one of these conditions may result in damage to this device
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03 | Keysight | HMMC-1002 DC–50 GHz Variable Attenuator - Data Sheet
DC Specications/Physical Properties
(TA = 25 °C)
Symbol Parameters/conditions Minimum Typical Maximum Units
I
V1
I
V2
V
p
V1 control current, (V1 = –4 V) 5.3 9.3 12 mA
V2 control current, (V2 = –4 V) 5.3 9.3 12 mA
Pinch-off voltage, (V2, W/V1 = 0 V)
(Four 200 µm wide shunt FETs, V
= 1 V @ RF
, IDD = 5 mA)
in
–0.6 –1.3 –2.5 Volts
DD
Electrical Specications
1
(TA = 25 °C, Z0 = 50 Ω)
Parameters/conditions Frequency (GHz) Minimum Typical Maximum Units
Minimum attenuation,
|S21|( V
= 0 V, V2 = –4 V)
1
Input/output return loss @
minimum attenuation setting,
(V
= 0 V, V2 = –4 V)
1
Maximum attenuation
|S21|( V
= –4 V, V2 = 0 V)
1
Input/output return loss @
maximum attention setting,
(V
= –4 V, V2 = 0 V)
1
DC power dissipation,
(V
= –5 V, V2 = –5 V)
1
(does not include input signals)
1.5 1.0 2.4 dB
8.0 1.4 2.4 dB
20.00 1.7 2.4 dB
26.5 2.0 2.4 dB
50.0 3.9 dB
< 26.5 10 16 dB
< 50.0 8 dB
1.5 27 30 dB
8.0 27 38 dB
20.0 27 38 dB
26.5 27 40 dB
50.0 35 dB
< 26.5 8 10 dB
< 50.0 10 dB
152 mW
1. Attenuation is a positive number; whereas, S21 as measured on a network analyzer would be a
negative number.
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04 | Keysight | HMMC-1002 DC–50 GHz Variable Attenuator - Data Sheet
Applications
The HMMC-1002 is designed to be used as a gain control block in an ALC assembly. Because
of its wide dynamic range and return loss performance, the HMMC-1002 may also be used as a
broadband pulse modulator or single-pole single-throw, non-reective switch.
Operation
The attenuation value of the HMMC-1002 is adjusted by applying negative voltage to V2. At any
attenuation setting, optimum VSWR is obtained by applying negative voltage to V
negative voltage (V
establishes the attenuation level. Applying negative voltage (V
) to the gates of the shunt FETs sets the source-to-drain resistance and
2
) to the gates of the series FETs
1
optimizes the input and output match for different attenuation settings. In some applications, a
single setting of V
range (V
). For any HMMC-1002 the values of V1 may be adjusted so that the device attenuation
2
versus voltage is monotonic for both V
may provide sufcient input and output match over the desired attenuation
1
and V2; however, this will slightly degrade the input and
1
output return loss.
The attenuation and input/output match of the HMMC-1002 may also be controlled using
only a single input voltage by utilizing the on-chip DC reference circuit and the driver circuit
shown in Figure 4. This circuit optimizes VSWR for any attenuation setting. Because of process
variations, the values of V
, R
, and RL are different for each wafer if optimum performance is
REF
REF
required. Typical values for these elements are given. The ratio of the resistors R
mines the sensitivity of the attenuation versus voltage per formance of the attenuator.
. Applying
1
and R2 deter-
1
Assembly Techniques
GaAs MMICs are ESD sensitive. ESD preventive measures must be employed in all aspects of
storage, handling, and assembly.
MMIC ESD precautions, handling considerations, die attach and bonding methods are critical
factors in successful GaAs MMIC performance and reliability.
The Keysight Technologies, Inc. application note GaAs MMIC ESD, Die Attach and Bonding
Guidelines, literature number 5991-3484EN, provides basic information on these subjects.
Additional References
2-26.5 Variable Gain Amplier Using HMMC-5021/22/26 and HMMC-1002 GaAs MMIC
Components, Application Note, literature number 5991-3543EN
HMMC-1002 Attenuator: Attenuation Control, Application Note,
literature number 5991-3555EN
DC-50 GHz Variable Attenuator: S-Parameters, Application Note,
literature number 5991-3556EN
HMMC-1002 DC-50 GHz Variable Attenuator: Switching Speed Limitations, Application Note,
literature number 5991-3557EN
HMMC-1002 50 GHz Attenuator 0-50 GHz Performance, Technical Overview,
literature number 5991-3554EN
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05 | Keysight | HMMC-1002 DC–50 GHz Variable Attenuator - Data Sheet
Figure 1. Schematic
610
RF
IN
70
0
0 476
75
DC
IN
V1
584
DC
V2
OUT
887
994 1470
OUT
139 5
RF
233233
Notes:
1) All dimensions in microns and shown to center of bond pad.
2) DCin, V1, DC
3) RF input and output bonding pads are 60 x 70 microns.
, and V2 bonding pads are 75 x 75 microns.
out
4) Chip thickness: 127 ± 15 µm.
Figure 2. Bonding pad locations
Figure 3. Assembly diagram
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06 | Keysight | HMMC-1002 DC–50 GHz Variable Attenuator - Data Sheet
To
To
To
DC In
To
V
V
1
Figure 4. Attenuator driver
DC Out
2
R
L
(400W - 500Ω)
500 Ω
V
REF
(-.4V to -1.0V)
500 Ω
Typical Performance
Op. Amp
A
–
+
B
R
REF
(350Ω - 500Ω)
V
IN
(0V to -4.0V)
Figure 5. Attenuation vs. frequency
1
1. Data obtained from on-wafer measurements. T
chuck
= 25°C.
Figure 6. Output return loss vs. frequency
1
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07 | Keysight | HMMC-1002 DC–50 GHz Variable Attenuator - Data Sheet
Typical Power Performance
(NOTE: All attenuation settings were done at 1 GHz)
Figure 7. Attenuation vs. input power @ 50.0 MHz
Attenuation setting
1
Attenuation setting
Figure 8. Attenuation vs. input power @ 2.0 GHz
Attenuation setting
1
Attenuation setting
Figure 9. Attenuation vs. input power @ 10.0 GHz
1
Attenuation setting
Figure 11. Attenuation vs. input power @ 18.0 GHz
1
1. Data taken with the device mounted in connectorized package
Figure 10. At tenuation vs. input power @ 14.0 GHz
Figure 12. At tenuation vs. input power @ 22.0 GHz
1
Attenuation setting
1
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08 | Keysight | HMMC-1002 DC–50 GHz Variable Attenuator - Data Sheet
Typical Harmonic Performance
Fundamental
frequency
Figure 13. Second harmonic suppression vs. attenuation, input power = 0.0 dBm
1. Data taken with the device mounted in connectorized package
1
Figure 14. Third harmonic suppression vs. attenuation, input power = 0.0 dBm
Fundamental
frequency
1
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09 | Keysight | HMMC-1002 DC–50 GHz Variable Attenuator - Data Sheet
Typical Temperature Performance
Temperature setting Temperature setting
Figure 15. At tenuation vs. temperature @ minimum attenuation
Temperature setting Temperature setting
Figure 17. Attenuation vs. temperature @ 10 dB at tenuation
1
Temperature setting Temperature setting
1
Figure 16. At tenuation vs. temperature @ 5 dB attenuation
Figure 18. At tenuation vs. temperature @ 20 dB attenuation
1
1
Figure 19. At tenuation vs. temperature @ 30 dB attenuation
1
1. Data taken with the device mounted in connectorized package
Figure 20. Attenuation vs. temperature @ maximum attenuation
1
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10 | Keysight | HMMC-1002 DC–50 GHz Variable Attenuator - Data Sheet
This data sheet contains a variety of typical and guaranteed performance data.
The information supplied should not be interpreted as a complete list of circuit
specications. Customers considering the use of this, or other Keysight GaAs ICs,
for their design should obtain the current production
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© Keysight Technologies, 2013 - 2014
Published in USA, August 3, 2014
5989-6201EN
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