KEXIN MOSFET Service Manual

SMD Type

MOSFET

MOS Field Effect Transistor

2SK3740

+0.1

Features

Gate voltage rating: 30 V

-0.1

1.27

Low on-state resistance

+0.2

R

DS(on) = 160 mÙ MAX. (VGS =10V,ID =10A)

-0.2

8.7

Low gate charge

+0.2

2.54

-0.2

5.28

+0.2

-0.2

Q

G =47nCTYP.(VDD = 200 V, VGS =10V,ID =20A)

Surface mount package available

Absolute Maximum Ratings Ta = 25

Parameter Symbol Rating Unit

Drain to source voltage V

Gate to source voltage V

Drain current

Power dissipation T

A=25

C=25

T

Channel temperature T

Storage temperature Tstg -55to+150

*PW 10 s,Duty Cycle 1%

DSS 250 V

GSS

D

I

dp *

I

P

D W

ch 150

30

20

60

1.5

100

1.27

+0.1

-0.1

5.08

TO-263

0.81

2.54

+0.1

-0.1

V

Unit: mm

+0.2

4.57

-0.2

+0.1

1.27

-0.1

5.60

-0.2

15.25

1Gate

2Drain

3 Source

+0.1

-0.1

0.1max

+0.2

-0.2

2.54

0.4

+0.2

+0.2

-0.2

A

A

Electrical Characteristics Ta = 25

Parameter Symbol Testconditons Min Typ Max Unit

Drain cut-off current I

Gate leakage current I

Gate cut off voltage V

Forward transfer admittance

Drain to source on-state resistance R

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

DSS VDS=250V,VGS=0 10

GSS

GS(off) VDS=10V,ID=1mA 2.5 3.5 4.5 V

Yfs

DS(on) VGS=10V,ID=10A 0.12 0.16 Ù

on 17 ns

off 49 ns

VGS= 30V,VDS=0 10 A

VDS=10V,ID=10A 7.0 15 S

iss 1720 pF

V

oss 330 pF

rss 170 pF

r 17 ns

DS=10V,VGS=0,f=1MHZ

D=10A,VGS(on)=10V,RG=0 ,VDD=125V

I

Fall time tf 9 ns

Total Gate Charge Q

Gate to Source Charge Q

Gate to Drain Charge Q

G 47 nC

GS 7nC

GD 25 nC

DD = 200V

V

GS =10V

V
I

D =20A

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A

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