Kexin CR08AS-12, CR08AS-8 Schematic [ru]

SMD Type

Non-Insulated Type,Glass Passivation Type

Features

IT(AV) :0.8A

VDRM :400V/600V

IGT :100 A

Thyristor

Low Power Use

CR08AS

1GATE
2ANODE
3CATHODE

Absolute Maximum Ratings Ta = 25

Parameter Symbol CR08AS-8 CR08AS-12 Unit

Repetitive peak reverse voltage V

Non-repetitive peak reverse voltage V

DC reverse voltage V

Repetitive peak off-state voltage *1 V

DC off-state voltage *1 V

RMS on-state current

Average on-state current I

Surge on-state current I

2

t for fusing

I

Peak gate power dissipation

Average gate power dissipation

Peak gate forward voltage V

Peak gate reverse voltage

Peak gate forward current

Junction temperature

Storage temperature

*1 With Gate-to-cathode resistance RGK=1k

RRM 400 600 V

RSM 500 720 V

R(DC) 320 480 V

DRM 400 600 V

D(DC) 320 480 V

T(RMS) A

I

T(AV) A

TSM A

2

tA

I

P

GM W

P

G(AV) W

FGM V

V

RGM V

FGM A

I

j

T

stg

T

1.26

0.8

10

0.42

0.5

0.1

6

6

0.3

-40 to +125

-40 to +125

2

s

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SMD Type

Thyristor

CR08AS

Electrical Characteristics

Ta = 25

Parameter Symbol Testconditons Min Typ. Max Unit

Repetitive peak reverse current I

Repetitive peak off-state current I

On-state voltage V

Gate trigger voltage V

Gate non-trigger voltage V

Gate trigger current I

Holding current I

Thermal resistance R

*1 IGT,VGTmeasurement circuit.

RRM

Tj=125 ,V

DRM

Tj=125 ,V

TM

Ta=25 ,ITM=2.5A, instantaneous value

GT

Ta=25 ,VD=6V, IT=0.1A*1

GD

Tj=125 ,VD=1/2V

GT

Tj=25 ,VD=6V, IT=0.1A *1

H

Tj=25 ,VD=12V, RGK=1k

th (j-a)

Junction to ambient 65

RRM

applied,RGK=1k

DRM

applied, RGK=1k

DRM,RGK

=1k

0.5 mA

0.5 mA

1.5 V

0.8 V

0.2 V

1

100

*2

1.5 3 mA

A

W

*2 If special values of IGTare required, choose at least two items from those listed in the table below.

Item A B C

( A)

GT

I

1to30 20to50 40to100

Marking

NO. CRO8AS-8 CRO8AS-12

Marking AD AF

MAXIMUM ON-STATE CHARACTERISTICS

2

10

7

Ta = 25°C

5
3

2

1

10

7
5

3
2

0

10

7
5

ON-STATE CURRENT (A)

3
2

–1

10

501 423

RATED SURGE ON-STATE CURRENT

10

9
8
7
6
5
4
3
2
1

SURGE ON-STATE CURRENT (A)

0

10023 5710

44

1

23 5710

2

2

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ON-STATE VOLTAGE (V)

CONDUCTION TIME

(CYCLES AT 60Hz)

SMD Type

Thyristor

CR08AS

GATE CHARACTERISTICS

2

10

7
5

3
2

V

= 6V

FGM

1

10

7
5

P

= 0.1W

G(AV)

3
2

VGT = 0.8V

0

10

7
5

3
2

–1

10

GATE VOLTAGE (V)

7

VGD = 0.2V

5
3

2

–2

10

–2

23 57 23 57

10

10

–1

IGT = 100µA
(T

j

= 25°C)

0

10

GATE CURRENT (mA)

GATE TRIGGER VOLTAGE VS.

JUNCTION TEMPERATURE

1.0

)

0.9

V

(

0.8

0.7

DISTRIBUTION

TYPICAL EXAMPLE

0.6

0.5

0.4

0.3

0.2

GATE TRIGGER VOLTAGE

0.1
0

–20 20 80

06040 100

23 57

PGM = 0.5W

FGM

I

= 0.3A

1

23 57 23

10

10

GATE TRIGGER CURRENT VS.

JUNCTION TEMPERATURE

3

10

TYPICAL EXAMPLE

7
5

100 (%)

3
2

2

10

= t°C)

= 25°C)

7

j

j

5
3

2

1

10

7
5

3
2

0

10

GATE TRIGGER CURRENT (T

2

GATE TRIGGER CURRENT (T

16060–20–40 0 20 40 80 100120140

JUNCTION TEMPERATURE (°C)

MAXIMUM TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(JUNCTION TO AMBIENT)

0

2310

3

10

7
5

3
2

2

10

7
5

3
2

1

10

7
5

3
2

0

10

120–40

TRANSIENT THERMAL IMPEDANCE (°C/W)

5710123 5710223 5710

25 25 t0.7
ALUMINUM BOARD
WITH SOLDERING

–3

2310

5710–223 5710–123 5710

3

0

JUNCTION TEMPERATURE (°C)

MAXIMUM AVERAGE POWER DISSIPATION

(SINGLE-PHASE HALF WAVE)

1.6

1.4

θ = 30° 60° 120°90°

180°

1.2

1.0

0.8

0.6

0.4

0.2

AVERAGE POWER DISSIPATION (W)

RESISTIVE, INDUCTIVE LOADS

0

0.4 0.8 1.2 1.40.2 0.6 1.0

θ

360°

AVERAGE ON-STATE CURRENT (A)

TIME (s)

ALLOWABLE AMBIENT TEMPERATURE VS.

AVERAGE ON-STATE CURRENT

(SINGLE-PHASE HALF WAVE)

160

25 25 t0.7
ALUMINUM BOARD

140

WITH SOLDERING

120
100

80
60

θ = 30°

40
20

AMBIENT TEMPERATURE (°C)

1.60

0

90° 180°

60° 120°

0.4 0.8 1.2 1.40.2 0.6 1.0

θ

360°

RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION

1.60

AVERAGE ON-STATE CURRENT (A)

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