Kexin BSS87 Schematics

SMD Type

1.80

+0.1

-0.1

4.50

+0.1

-0.1

2.50

+0.1

-0.1

0.80

+0.1

-0.1

4.00

+0.1

-0.1

0.53

+0.1

-0.1

0.48

+0.1

-0.1

1.50

+0.1

-0.1

0.44

+0.1

-0.1

2.60

+0.1

-0.1

0.40

+0.1

-0.1

3.00

+0.1

-0.1

SOT-89

Unit: mm

1. Base

2. Collector

3. Emiitter

1. Source

2. Drain

3. Gate

123

1 Gate

2 Drain

3 Source

N-Channel Enhancement Mode MOSFET

BSS87

■ Features

● High-speed switching

● No secondary breakdown.

● Low RDS(on)

■ Absolute Maximum Ratings Ta = 25℃

Parameter Symbol Rating Unit

Drain-to-source voltage VDSS 200 V

Gate-to-source voltage VGS

±20

V

Drain Current – Continuous 280 mA

– Pulsed 1.1 A

Total power dissipation @ TA = 25℃

PD 1 W

Thermal resistance,junction-to-ambient RθJA 125

℃/W

Operating and storage temperature range TJ, Tstg -55 to 150

℃

ID

■ Electrical Characteristics Ta = 25℃

Parameter Symbol Test conditons Min Typ Max Unit

Drain-to-source breakdown voltage V(BR)DSS VGS = 0 V, ID = 250 μA 200 V

Zero Gate Voltage Drain Current IDSS VDS = 200 V, VGS = 0 60 μA

Gate-source leakage current IGSS

VGS = ± 20 V, VDS = 0 ±0.1

μA

Gate-source threshold voltage VGS(th) VDS = VGS, ID = 1.0 mA 0.8 2.8 V

Static drain-to-source on-rResistance RDS(on) VGS = 10V, ID = 400mA 6 Ω

Input capacitance Ciss 60

Output capacitance Coss 25

Transfer capacitance Crss 10

Turn-on delay time td(on) 10

Rise time tr 12

Turn-off delay time td(off) 25

Fall time

tf 40

VDS = 25 V, VGS = 0, f = 1 MHz

VDD = 120 V,VGS=10V, ID = 280m A,

RGEN = 6Ω

ns

pF

MOSFET

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