Kexin 2SK1584 Schematic [ru]

SMD Type

MOSFET

MOS Field Effect Transistor

2SK1584

Features

Directly driven by Ics having a 5V P

Has low on-state resistance

R

DS(on)=2.0 MAX.@VGS=4.0V,ID=0.3A

R

DS(on)=1.5 MAX.@VGS=10V,ID=0.3A

Absolute Maximum Ratings Ta = 25

Parameter Symbol Rating Unit

Drain to source voltage V

Gate to source voltage V

Drain current (DC) I

Drain current(pulse) * I

Power dissipation P

Channel temperature T

Storage temperature Tstg -55to+150

*PW 10ms, duty cycle 5%

DSS 30 V

GSS

D

D

D 2.0 W

ch 150

20

0.5

1.0

0.48

1

+0.1

-0.1

SOT-89

+0.1

4.50

-0.1

+0.1

1.80

-0.1

2

+0.1

3.00

-0.1

V

A

A

0.53

Unit: mm

+0.1

1.50

-0.1

+0.1

-0.1

+0.1

-0.1

2.50

4.00

3

+0.1

-0.1

+0.1

-0.1

0.80

+0.1

-0.1

2.60

+0.1

-0.1

0.40

0.44

+0.1

-0.1

1Gate

1. Base

1. Source

2Drain

2. Collector

2. Drain

3Source

3. Emiitter

3. Gate

Electrical Characteristics Ta = 25

Parameter Symbol Testconditons Min Typ Max Unit

Drain cut-off current I

Gate leakage current I

Gate to source cutoff voltage V

Forward transfer admittance

Drain to source on-state resistance RDS(on)

DSS VDS=30V,VGS=0 10

GSS

VGS= 20V,VDS=0 10 A

GS(off) VDS=10V,ID=0.1mA 1.3 1.85 2.5 V

VDS=5.0V,ID=0.5A 350 440 ms

Yfs

GS=4.0V,ID=0.3A 1.2 2.0

V

VGS=10V,ID=0.3A 0.65 1.5

Input capacitance Ciss 60 pF

V

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

d(on) 80 ns

d(off) 100 ns

DS=5.0V,VGS=0,f=1MHZ

oss 50 pF

rss 9pF

r 270 ns

I

D=0.3A,VGS(on)=4V,RL=33

,VDD=10V,RG=10

f 110 ns

Marking

Marking NH

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A

1