Kexin 2SC3357 Schematic [ru]
SMD Type
SMD Type
NPN Silicon RF Transistor
2SC3357
Features
Low Noise and High Gain
NF = 1.1 dB TYP., G
I
C =7mA,f=1.0GHz
NF = 1.8 dB TYP., G
C =40mA,f=1.0GHz
I
High power gain : MAG = 10 dB TYP. @ IC =40mA,f=1GHz
Absolute Maximum Ratings Ta = 25
a =7.5dBTYP.@VCE =10V,
a =9.0dBTYP.@VCE =10V,
Transistors
IC
Parameter Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base v oltage V
Collector current I
Total power dissipation P
Junction temperature T
Storage temperature Tstg -65to+150
Thermal Resistance R th(j-a)* 62.5
* mounted on 16 cm
2
X 0.7 mm(t) Ceramic Substrate
CBO 20 V
CEO 12 V
EBO 3.0 V
C 100 mA
T*1.2 W
j 150
/W
Electrical Characteristics Ta = 25
Parameter Symbol Testconditons Min Typ Max Unit
Collector cutoff current I
Emitter cutoff current I
DC current gain h
Insertion Power Gain
Output Capacitance C
Transition frequency f
*1 Pulse Measurement PW
*2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitnace bridge.
350 ms, Duty Cycle 2%
CBO VCB =10V,IE=0 1.0
EBO VEB =1.0V,IC=0 1.0
FE *1 VCE =10V,Ic=20mA 50 120 250
2
VCE =10V,IC =20mA,f=1.0GHz 9 dB
21e|
|S
CE =10V,IC = 7 mA, f = 1.0 GHz 1.1 dB
V
NFNoise Figure
CE =10V,IC = 40 mA, f = 1.0 GHz 1.8 3.0 dB
V
ob VCB =10V,IE = 0, f = 1.0 MHz 0.65 1.0 pF
T VCE = 10V ,Ic=20mA 6.5 GHz
hFE Classification
A
A
Marking RH RF RE
Rank RH RF RE
hFE
100 80 160 125 250
20
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