Kexin 2SB1025 Schematic [ru]
SMD Type
2SB1025
Features
Classification of h
Transistors
PNP Transistors
■
● Low frequency power amplifier
● Complementary to 2SD1418
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector - Base Voltage V
Collector - Emitter Voltage V
Emitter - Base Voltage VEBO -5
Collector Current - Continuous I
Collector current -Pulse (Note.1) I
Collector Power Dissipation P
Junction Temperature T
Storage Temperature range T
Note.1: PW ≤ 10ms,Duty cycle≤ 20℅
CBO -120
CEO -80
C -1
CP -2
C 1 W
J 150
stg
■ Electrical Characteristics Ta = 25℃
-55 to 150
0.42 0.1
1.70 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
V
A
℃
Parameter Symbol Test Conditions Min Typ Max Unit
Collector- base breakdown voltage V
Collector- emitter breakdown voltage V
Emitter - base breakdown voltage V
Collector-base cut-off current I
Emitter cut-off current I
Collector-emitter saturation voltage V
Base - emitter saturation voltage V
Base - emitter voltage V
DC current gain h
Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 20 pF
Transition frequency f
■
Type 2SB1025-H 2SB1025-J 2SB1025-K
Range 60-120 100-200 160-320
Marking DH DJ DK
fe(1)
CBO
Ic= -100 μA， IE=0
CEO
Ic= -1 mA，RBE=∞
EBO
IE= -100μA， IC=0
CBO VCB= -100V , IE=0 -10
VEB= -5V , IC=0 -0.1
EBO
CE(sat) IC
BE(sat) IC
=-500m A, IB=-50mA -1
=-500m A, IB=-50mA -1.2
BE
VCE= -5V, IC= -150 mA -0.9
CE= -5V, IC= -150 mA 60 320
V
FE
CE= -5V, IC= -500 mA 30
V
T
VCE= -5V, IC= -150mA 140 MHz
-120
-80
-5
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V
uA
V
1
SMD Type
2SB1025
Typical Characterisitics
■
1.2
0.8
0.4
(on the alumina ceramic board)
Collector Power Dissipation Pc (W)
0 50 100 150
–500
–200
–100
(mA)
C
–50
–20
–10
–5
Collector Current I
–2
–1
Base to Emitter Voltage V
PNP Transistors
Maximum Collector Dissipation Curve
Ambient Temperature Ta (。C)
Typical Output Characteristics
VCE = –5 V
Pulse
。
Ta = 75 C
25
–25
–0.2 –0.40 –0.6 –0.8 –1.0
(V)
BE
Transistors
Typical Output Characteristics
–1.0
–0.8
(A)
C
–0.6
–0.4
Collector Current I
–0.2
0 –2 –4 –6 –8 –10
600
FE
500
400
300
200
100
DC Current Transfer Ratio h
0
–1 –3 –10 –30 –100 –300 –1,000
–120
–100
–80
–60
–40
–30
–20
–10
–5
–2
–1
–0.5 mA
Collector to Emitter Voltage V
DC Current Transfer Ratio vs.
Collector Current
VCE = –5 V
Pulse
。
Ta = 75 C
25
–25
Collector Current I
(mA)
C
IB = 0
(V)
CE
(MHz)
T
Gain Bandwidth Product f
2
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Gain Bandwidth Product vs.
Collector Current
VCE = –5 V
300
200
100
–10 –30 –100 –300 –1,000
Collector Current I
(mA)
C
Collector Output Capacitance vs.
Collector to Base Voltage
200
f = 1 MHz
= 0
(pF)
ob
Collector Output Capacitance C
I
E
100
50
20
10
5
2
–1 –2 –5 –10 –20 –50 –100
Collector to Base Voltage VCB (V)
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