KES Semiconductor BCW68F, BCW68G Schematic [ru]
SEMICONDUCTOR
BCW68
TECHNICAL DATA
HIGH CURRENT APPLICATION.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* : Package Mounted On 99.9% Alumina 10ᴧ8ᴧ0.6mm.
V
V
V
PC *
T
CBO
CEO
EBO
I
C
I
E
T
stg
-800 mA
j
-55ᴕ150
-60 V
-45 V
-5 V
800 mA
350 mW
150
ᴱ
ᴱ
EPITAXIAL PLANAR PNP TRANSISTOR
E
B
LL
MILLIMETERS
DIM
A
B
C
D
3
M
D
E
G
H
J
K
L
M
N
P7
J
C
H
N
2
1
PP
K
1. EMITTER
2. BASE
3. COLLECTOR
A
G
_
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
SOT-23
MARK SPEC
TYPE MARK
Marking
h Rank
FE
Lot No.
BCW68F DF
BCW68G DG
1998. 6. 15 1/2
Revision No : 1
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
BCW68
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
V
(BR)CEO
V
(BR)EBO
I
I
CES
EBO
Group F
Group G 120 - -
Group F
DC Current Gain
h
Group G 160 - 400
Group F
Group G 60 -
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Collector Input Capacitance
V
V
BE(sat)
CE(sat)
f
C
C
Noise Figure NF
IC=-10mA, IB=0
IE=10ỌA, IC=0
VEB=0V, VCE=-45V
Ta=150ᴱ, VEB=0V, VCE=-45V
IC=0, VEB=-4V
-45 - - V
-5.0 - - V
- - -20 nA
- - -20
ỌA
- - -20 nA
75 - -
VCE=-1V, IC=-10mA
100 - 250
FE
VCE=-1V, IC=-100mA
35 - -
VCE=-1V, IC=-500mA
IC=-100mA, IB=-10mA
- - -1.25
V
IC=-500mA, IB=-50mA
IC=-100mA, IB=-10mA
- - -2.0
- - -0.3
V
IC=-500mA, IB=-50mA
T
ob
ib
IC=-80mA, VCE=-10V, f=100MHz
VCB=-10V, IE=0, f=1MHz
VEB=-0.5V, f=1MHz
- - -0.7
100 - - MHz
- - 18 pF
- - 80 pF
IC=-0.2mA, VCE=-5V,
- 2.0 10 dB
Rg=1kή, f=1kHz
1998. 6. 15 2/2
Revision No : 1
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