Keithley S530 User Manual

S530 Parametric Test System

Test Subroutine Library User’s Manual

S530-907-01 Rev. A / September 2015

www.keithley.com

*PS53090701A*

S530-907-01A

A Greater Measure of Condence

A Tektr onix Company

Test Subroutine Library

S530 Parametric Test System

User's Manual

Cleveland, Ohio, U.S.A.

Any unauthorized reproduction, photocopy, or use of the information herein, in whole or in part,

without the prior written approval of Keithley Instruments is strictly prohibited.

All Keithley Instruments product names are trademarks or registered trademarks of Keithley Instruments. Other brand names are trademarks or registered trademarks of their respective

holders.

Document number: S530-907-01 Rev. A / September 2015

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The following safety precautions should be observed before using this product and any associated instrumentation. Although some instruments and accessories would normally be used with nonhazardous voltages, there are situations where hazardous conditions may be present.

This product is intended for use by qualified personnel who recognize shock hazards and are familiar with the safety precautions required to avoid possible injury. Read and follow all installation, operation, and maintenance information carefully before using the product. Refer to the user documentation for complete product specifications.

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Safety precaution revision as of January 2013.

General information .................................................................................................. 1-1

Introduction .......................................................................................................................... 1-1

Manual contents ................................................................................................................... 1-1

Contact information .............................................................................................................. 1-1

Using the test subroutine library ............................................................................. 2-1

How to use the library reference .......................................................................................... 2-1

Categorized subroutine lists ................................................................................................. 2-2

Bipolar subroutines ................................................................................................................... 2-3

Resistors, diodes, capacitors, and special structure subroutines .............................................. 2-4

MOSFET subroutines ................................................................................................................ 2-4

FET and JFET subroutines ....................................................................................................... 2-5

Math and support subroutines ................................................................................................... 2-5

Test subroutine library reference ............................................................................ 3-1

Subroutine descriptions........................................................................................................ 3-1

beta1 ......................................................................................................................................... 3-1

beta2 ......................................................................................................................................... 3-3

beta2a ....................................................................................................................................... 3-4

beta3a ....................................................................................................................................... 3-6

bice ........................................................................................................................................... 3-8

bkdn .......................................................................................................................................... 3-9

bvcbo ...................................................................................................................................... 3-10

bvcbo1 .................................................................................................................................... 3-11

bvceo ...................................................................................................................................... 3-13

bvceo2 .................................................................................................................................... 3-14

bvces ....................................................................................................................................... 3-15

bvces1 ..................................................................................................................................... 3-16

bvdss ....................................................................................................................................... 3-17

bvdss1 ..................................................................................................................................... 3-19

bvebo ...................................................................................................................................... 3-20

cap .......................................................................................................................................... 3-21

deltl1 ....................................................................................................................................... 3-23

deltw1 ...................................................................................................................................... 3-24

ev ............................................................................................................................................ 3-25

fimv ......................................................................................................................................... 3-27

fnddat ...................................................................................................................................... 3-28

fndtrg ....................................................................................................................................... 3-29

fvmi ......................................................................................................................................... 3-29

gamma1 .................................................................................................................................. 3-31

gd ............................................................................................................................................ 3-32

gm ........................................................................................................................................... 3-34

ibic1 ......................................................................................................................................... 3-35

icbo ......................................................................................................................................... 3-37

iceo ......................................................................................................................................... 3-38

ices .......................................................................................................................................... 3-39

id1 ........................................................................................................................................... 3-40

idsat ........................................................................................................................................ 3-42

idss .......................................................................................................................................... 3-43

iebo ......................................................................................................................................... 3-44

idvsvg ...................................................................................................................................... 3-45

Table of Contents S530 Parametric Test System Test Subroutine Library User's Manual

isubmx ..................................................................................................................................... 3-46

kdelay ...................................................................................................................................... 3-47

leak ......................................................................................................................................... 3-48

logstp ...................................................................................................................................... 3-49

rcsat ........................................................................................................................................ 3-50

re ............................................................................................................................................. 3-53

res ........................................................................................................................................... 3-55

res2 ......................................................................................................................................... 3-56

res4 ......................................................................................................................................... 3-57

resv ......................................................................................................................................... 3-58

rvdp ......................................................................................................................................... 3-59

tdelay ...................................................................................................................................... 3-60

tox ........................................................................................................................................... 3-61

vbes ........................................................................................................................................ 3-62

vf ............................................................................................................................................. 3-63

vg2 .......................................................................................................................................... 3-64

vgsat ....................................................................................................................................... 3-66

vp ............................................................................................................................................ 3-67

vp1 .......................................................................................................................................... 3-69

vt14 ......................................................................................................................................... 3-70

vtati ......................................................................................................................................... 3-71

vtext ........................................................................................................................................ 3-73

vtext2 ...................................................................................................................................... 3-76

vtext3 ...................................................................................................................................... 3-78

Index ........................................................................................................................... I-1

In this section:

Introduction .............................................................................. 1-1

Manual contents ....................................................................... 1-1

Contact information .................................................................. 1-1

Section 1

General information

Introduction

The S530 Test Subroutine Library (PARLib) is a parameter extraction and data analysis software system. The PARLib subroutines are used to analyze data associated with S530 parametric tests.

This manual contains detailed descriptions of the S530 PARLib subroutines. It is intended as a reference guide for experienced users.

Manual contents

This manual is organized into the following sections:

 General information: A definition of what the S530 Test Subroutine Library (PARLib) is, the

organization of the manual, and how you can contact us if you have questions.

 Using the test subroutine library: Information about how the descriptions of the subroutines are

presented and a categorized list of the subroutines with links to the individual subroutine descriptions.

 Test subroutine library reference: Detailed information about each of the subroutines, in

alphabetical order. Descriptions include subroutine purpose, usage (syntax and parameters), information about placement and relationship to other subroutines, and schematics (where applicable).

Contact information

If you have any questions after you review the information in this documentation, please contact your local Keithley Instruments office, sales partner, or distributor. You can also call Keithley Instruments corporate headquarters (toll-free inside the U.S. and Canada only) at 1-800-935-5595, or from outside the U.S. at +1-440-248-0400. For worldwide contact numbers, visit the Keithley website (http://www.keithley.com).

In this section:

How to use the library reference .............................................. 2-1

Categorized subroutine lists ..................................................... 2-2

Section 2

Using the test subroutine library

How to use the library reference

The subroutines in the Test subroutine library reference (on page 3-1) are in the C programming language. Each subroutine is presented in a standard format that follows the pattern below:

 Purpose statement: The first line of text under the subroutine heading contains a brief

explanation of what the subroutine does.

Figure 1: Example purpose statement

 Usage: A line of code representing the prototype of the subroutine, followed by a table listing the

input and output parameters for the subroutine. Parameters that you specify are shown in monospace italic font; parameters preceded by an asterisk (*) are pointers to information that is returned. Each parameter is preceded by one of the following declarations that specifies the data type for the parameter: int (integer), double (double-precision floating-point), and char (a single character value).

Figure 2: Example syntax and parameter definition

Section 2: Using the test subroutine library S530 Parametric Test System Test Subroutine Library User's Manual

2-2 S530-907-01 Rev. A / September 2015

 Details: Additional information about using the subroutine.

Figure 3: Example details

 V/I polarities: The polarities of the current or voltage flow between the pins of the device; based

on whether you are using an NPN or PNP transistor. This information is only applicable in some subroutines.

Figure 4: Example V/I polarities information

 Source-measure units (SMUs): A description of what each SMU in the test configuration does in

the subroutine. This information is only applicable in some subroutines.

Figure 5: Example SMUs description

 Schematic: A simplified schematic showing the configuration of the instruments and devices for

the subroutine. This information is only applicable in some subroutines.

Figure 6: Example schematic

Categorized subroutine lists

The subroutine descriptions are listed in alphabetical order in the Test subroutine library reference (on page 3-1) section of this manual. The tables that follow contain all of the subroutines grouped by function, with a brief description of the purpose of the subroutine and a hyperlink to the full subroutine description.

S530 Parametric Test System Test Subroutine Library User's Manual Section 2: Using the test subroutine library

S530-907-01 Rev. A / September 2015 2-3

Bipolar subroutines

Subroutine

Description

Link

beta1

Calculate DC  at specified IE and VCB

beta1 (on page 3-1)

beta2

Calculate DC and VBE at specified IC and VCE

beta2 (on page 3-3)

beta2a

Calculate  at VCB and ICE with search on IE

beta2a (on page 3-4)

beta3a

Calculate  at VCE and ICE with search on IBE

beta3a (on page 3-6)

bice

Calculate  when VBE swept, at VCE and V

SUB

bice (on page 3-8)

bvcbo

Measure collector-base breakdown voltage, emitter open

bvcbo (on page 3-10)

bvcbo1

Measure collector-base breakdown voltage using LPTLib bsweepv subroutine

bvcbo1 (on page 3-11)

bvceo

Measure collector-emitter breakdown voltage, base open

bvceo (on page 3-13)

bvceo2

Measure collector-emitter breakdown voltage using LPTLib bsweepv subroutine

bvceo2 (on page 3-14)

bvces

Measure collector-emitter breakdown voltage

bvces (on page 3-15)

bvebo

Measure emitter-base breakdown voltage, collector open

bvebo (on page 3-20)

ibic1

Measure ICE, IBE and calculate  at VCE, VBE, V

SUB

ibic1 (on page 3-35)

icbo

Measure collector-base leakage at VCB and V

SUB

icbo (on page 3-37)

iceo

Measure collector-emitter leakage at VCE and V

SUB

iceo (on page 3-38)

ices

Measure emitter-collector leakage at V

CES

and V

SUB

ices (on page 3-39)

iebo

Measure emitter-base leakage at VEB and V

SUB

iebo (on page 3-44)

rcsat

Estimate rcsat when IC and IB swept at constant 

rcsat (on page 3-50)

Estimate emitter resistance

re (on page 3-53)

vbes

Measure base-emitter voltage at specified IE (VC = VB)

vbes (on page 3-62)

Section 2: Using the test subroutine library S530 Parametric Test System Test Subroutine Library User's Manual

2-4 S530-907-01 Rev. A / September 2015

Resistors, diodes, capacitors, and special structure subroutines

Subroutine

Description

Link

bkdn

Measure breakdown voltage (force I, measure V)

bkdn (on page 3-9)

cap

Measure two-terminal capacitance

cap (on page 3-21)

fimv

Force current and measure voltage on device with four high pins and four ground pins

fimv (on page 3-27)

fvmi

Force voltage and measure current on device with four input pins and four ground pins

fvmi (on page 3-29)

leak

Measure leakage current at specified voltage

leak (on page 3-48)

res

2-terminal resistance (force I, measure V)

res (on page 3-55)

res2

2-terminal resistance with voltage limit

res2 (on page 3-56)

res4

4-terminal resistance (force I, measure V)

res4 (on page 3-57)

resv

2-terminal resistance (force V, measure I)

resv (on page 3-58)

rvdp

4-terminal van der Pauw measurement

rvdp (on page 3-59)

tox

Calculate oxide thickness from capacitance

tox (on page 3-61)

Measure the forward junction voltage of a diode

vf (on page 3-63)

Subroutine

Description

Link

bvdss

Measure drain-source breakdown voltage (VG = 0)

bvdss (on page 3-17)

bvdss1

Measure drain-source breakdown voltage using LPTLib bsweepv subroutine

bvdss1 (on page 3-19)

deltl1

Estimate delta L MOSFET parameter

deltl1 (on page 3-23)

deltw1

Estimate delta W for a MOSFET

deltw1 (on page 3-24)

gamma1

Estimate body effect ()

gamma1 (on page 3-31)

Calculate drain conductance of a MOSFET

gd (on page 3-32)

id1

Measure drain current at specified VGS, VDS, and VBS

id1 (on page 3-40)

idsat

Measure drain current at VDS, VBS (VD = VG)

idsat (on page 3-42)

idgsvg

Measure IDS when VGS is swept at constant VDS and VBS

idvsvg (on page 3-45)

isubmx

Find peak substrate current at VDS,VBS

isubmx (on page 3-46)

vg2

Measure gate-source voltage at IDS, VDS, VBS

vg2 (on page 3-64)

vgsat

Measure V

GSAT

at specified IDS (VGS = VD)

vgsat (on page 3-66)

vt14

Estimate VT using two-point technique

vt14 (on page 3-70)

vtati

Find VT to produce specified IDS

vtati (on page 3-71)

vtext

Extrapolate gate-source threshold voltage

vtext (on page 3-73)

vtext2

Estimate VT using modified vtext subroutine method

vtext2 (on page 3-76)

vtext3

Calculate VT using max slope method

vtext3 (on page 3-78)

MOSFET subroutines

S530 Parametric Test System Test Subroutine Library User's Manual Section 2: Using the test subroutine library

S530-907-01 Rev. A / September 2015 2-5

FET and JFET subroutines

Subroutine

Description

Link

Estimate MESFET transconductance at VDS, VGS

gm (on page 3-34)

idss

Estimate MESFET I

DSS

and V

DSAT

at V

DSS

idss (on page 3-43)

Estimate FET pinch-off voltage for a MESFET

vp (on page 3-67)

vp1

Estimate MESFET pinch-off at IDS (IP) and VDS

vp1 (on page 3-69)

Subroutine

Description

Link

fnddat

Search an array, return a new array

fnddat (on page 3-28)

fndtrg

Determine which native mode trigger to use

fndtrg (on page 3-29)

kdelay

Delay, based on current and voltage values

kdelay (on page 3-47)

logstp

Create an array using logarithmic steps

logstp (on page 3-49)

tdelay

Return calculated delay time

tdelay (on page 3-60)

Math and support subroutines

In this section:

Subroutine descriptions ............................................................ 3-1

Input

The emitter pin of the device

Input

The base pin of the device

Input

The collector pin of the device

sub

Input

The substrate pin of the device

Input

The forced emitter current, in amperes

vcb

Input

The forced c to b bias, in volts

type

Input

Type of transistor: "N" or "P"

Returns

Output

The calculated beta of the device:

 -1.0 = TYPE not "N" or "P"  -2.0 = SMU2 overload  -3.0 = Divide by 0, or  < 0.01  -4.0 =  > 10 K or I

wrong sign

 -5.0 = Emitter voltage limit reached; developed emitter voltage is

within 98 % of the 3 V voltage limit

Section 3

Test subroutine library reference

Subroutine descriptions

beta1

This subroutine calculates the DC beta () of a test device at constant emitter current (IE) and collector-base bias (VCB). The device is in the common-base configuration.

Usage

double beta1(int e, int b, int c, int sub, double ie, double vcb, char type);

Details

If a positive substrate pin is specified, the substrate is grounded. If a positive substrate pin is not specified, the substrate is left floating.

A delay is incorporated into the beta1 subroutine; this delay is the calculated time required for stable forcing of emitter current with a 3 V voltage limit.

Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual

3-2 S530-907-01 Rev. A / September 2015

V/I polarities

result = beta1(e, b, c, sub, ie, vcb, type);

Source-measure units (SMUs)

 SMU1: Forces V  SMU2: Forces 0.0 V, measures base current (I

The polarities of VCB and IE are determined by device type.

Example

Schematic

 SMU3: Forces I

, default current limit

, 3 V voltage limit

)

S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference

S530-907-01 Rev. A / September 2015 3-3

beta2

Input

The emitter pin of the device

Input

The base pin of the device

Input

The collector pin of the device

sub

Input

The substrate pin of the device

ice

Input

The targeted collector current, in amperes

vce

Input

The forced collector-emitter voltage, in volts

type

Input

Type of transistor: "N" or "P"

vbeout

Output

The measured base voltage

icout

Output

The measured collector current

Returns

Output

The calculated beta:

 -1.0 = TYPE not "N" or "P"  -2.0 = SMU2 overload  -3.0 = Divide by 0, or  < 0.01  -4.0 =  > 10 K  -5.0 = Too many iterations  -6.0 = Emitter voltage limit reached; developed emitter voltage is

within 98 % of the 3 V voltage limit

This subroutine calculates beta () and base-emitter voltage (VBE) at a specified collector current (IC) and collector-emitter bias (VCE).

Usage

double beta2(int e, int b, int c, int sub, double ice, double vce, double *vbeout,

double *icout, char type);

Details

If a positive substrate pin is specified, the substrate is grounded. If a positive substrate pin is not specified, the substrate is left floating.

A delay is incorporated into the beta2 subroutine; this delay is the calculated time required for stable forcing of emitter current with a 3 V voltage limit.

A faster and simpler subroutine to use is beta2a (on page 3-4).

V/I polarities

The polarities of VCE and IE are determined by device type.

Source-measure units (SMUs)

 SMU1: Forces I  SMU2: Forces V  SMU3: Forces 0.0 V, measures base current (I

, 3 V voltage limit

, maximum current limit, measures ICE

)

Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual

3-4 S530-907-01 Rev. A / September 2015

Example

result = beta2 (e, b, c, sub, ice, vce, &vbeout, &icout, type);

Input

The emitter pin of the device

Input

The base pin of the device

Input

The collector pin of the device

sub

Input

The substrate pin of the device

ice

Input

The targeted collector current, in amperes

vcb

Input

The forced c to b bias, in volts

ie1

Input

The start of the emitter current search, in amperes

ie2

Input

The end of the emitter current search, in amperes

vsub

Input

The forced substrate bias, in volts

icmeas

Output

The final measured collector-emitter current

ieout

Output

The final forced value of emitter current

error

Output

The percent error between the target collector current (ICE) and the final measured collector current (I

CMEAS

)

Returns

Output

The calculated beta:

-1.0 = Target ICE = 0.0

-2.0 = Collector current limit reached

-3.0 = Emitter voltage limit reached

Schematic

beta2a

This subroutine calculates beta () at collector-base voltage (VCB) and collector-emitter current (ICE) using the searchi and trig LPTLib functions to search emitter current (IE) until the target ICE is reached. The device is in the common-base configuration.

Usage

double beta2a(int e, int b, int c, int sub, double ice, double vcb, double ie1,

double ie2, double vsub, double *icmeas, double *ieout, double *error);

S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference

S530-907-01 Rev. A / September 2015 3-5

Details

result = beta2a(e, b, c, sub, ice, vcb, ie1, ie2, vsub, &icmeas, &ieout, &error);

This subroutine is a revised version of the beta2 (on page 3-3) subroutine that uses the LPTLib searchi and trig functions to search IE until the target ICE is reached.

This subroutine sets the current trigger on SMU1 at the specified ICE. The emitter current is searched until the trigger is set. The emitter current is then forced, the collector current measured, and  is calculated.

The percent error (error) is calculated between the target ICE and the final measured ICE and returned.

If a zero or negative substrate pin is specified, the substrate is left floating. If the pin number is greater than 0 and V connected and forced.

V/I polarities

is less than 0.9 mV, the substrate is grounded. In all other cases, it is

SUB

NPN +ICE, +VCB, IE, -V PNP -ICE, -VCB, +IE, -V

Source-measure units (SMUs)

 SMU1: Forces V  SMU2: Forces 0.0 V, measures I  SMU3: Searches I

Example

Schematic

 SMU4: Forces V

SUB

, maximum current limit, triggers on ICE

, 3 V voltage limit

, default current limit

SUB

Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual

3-6 S530-907-01 Rev. A / September 2015

beta3a

Input

The emitter pin of the device

Input

The base pin of the device

Input

The collector pin of the device

sub

Input

The substrate pin of the device

ice

Input

The targeted collector current, in amperes

vce

Input

The forced collector-emitter voltage, in volts

ibe1

Input

The start of the base-emitter current (IBE) search, in amperes

ibe2

Input

The end of the base-emitter current (IBE) search, in amperes

vsub

Input

The forced substrate bias, in volts

ibe

Output

The final measured emitter-base current

icmeas

Output

The final measured collector-emitter current

error

Output

The percent error between the target collector current (ICE) and the final measured collector current (I

CMEAS

)

Returns

Output

The calculated beta:

-1.0 = Target ICE = 0.0

-2.0 = Base voltage limit reached

This subroutine calculates beta () at collector-emitter voltage (VCE) and collector-emitter current (ICE) using the searchi and trig LPTLib functions to search base-emitter current (IBE) until the target ICE is reached. The device is in the common-emitter configuration.

Usage

double beta3a(int e, int b, int c, int sub, double ice, double vce, double ibe1,

double ibe2, double vsub, double *ibe, double *cmeas, double *error);

Details

This subroutine sets the current trigger on SMU1 at the specified ICE. The base current is searched until the trigger is set. The base current is then forced, the collector current measured, and  is calculated.

The percent error (error) is calculated between the target ICE and the final measured ICE and returned.

If a zero or negative substrate pin is specified, the substrate is left floating. If the pin number is greater than 0 and V connected and forced.

V/I polarities

NPN +ICE, +VCE, +I PNP -ICE, -VCE, -IBE, -V

is less than 0.9 mV, the substrate is grounded. In all other cases, it is

SUB

-V

SUB

BE,

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Source-measure units (SMUs)

result = beta3a(e, b, c, sub, ice, vce, ibe1, ibe2, vsub, &ibe, &cmeas, &error);

Example

Schematic

 SMU1: Forces V  SMU2: Searches I  SMU3: Forces V

, maximum current limit, triggers on ICE

, 3 V voltage limit

, default current limit

SUB

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bice

Input

The emitter pin of the device

Input

The base pin of the device

Input

The collector pin of the device

sub

Input

The substrate pin of the device

vce

Input

The forced collector-emitter voltage, in volts

vbe1

Input

The start point of the VBE sweep, in volts

vbe2

Input

The end point of the VBE sweep, in volts

vsub

Input

Substrate bias, in volts

npts

Input

The number of points in the sweep

ice_last

Output

The measured ICE array

beta_last

Output

The calculated beta array

beta_max

Output

The maximum beta in the array

ic_max

Output

The ICE at maximum beta

This subroutine sweeps the emitter-base voltage (VBE), measures the resulting collector-emitter current (ICE), and calculates beta ()at each value of V configuration.

Usage

void bice(int e, int b, int c, int sub, double vce, double vbe1, double vbe2,

double vsub, int npts, double ice_last, double *beta_last, double *beta_max, double *ic_max);

for a bipolar transistor. The device is connected in the common-emitter

Details

The collector-emitter voltage (V In addition to the and I

maximum (ic_max) are returned. If a zero or negative substrate pin is specified, the substrate is left floating. If the pin number is

greater than 0 and V connected and forced.

V/I polarities

NPNs +VCE, +IBE, and -V PNPs -VCE, -IBE, and -V

Source-measure units (SMUs)

 SMU1: Forces V  SMU2: Sweeps V  SMU3: Forces V

) and the substrate voltage (V

return arrays, the maximum (beta_max) and collector current at

is less than 0.9 mV, the substrate is grounded. In all other cases, it is

SUB

, maximum current limit, measures ICE

, maximum current limit, measures IBE

, default current limit

SUB

) are held constant.

SUB

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Example

result = bice(e, b, c, sub, vce, vbe1, vbe2, vsub, npts, ice_last, &beta_last, &beta_max, &ic_max);

Input

The HI pin of the device

Input

The LO pin of the device

sub

Input

The substrate pin of the device

ipgm

Input

The forced current, in amperes

vlim

Input

The voltage limit, in volts

Returns

Output

The measured breakdown voltage: +2.0E + 21 = Measured voltage is within 98 % of the specified voltage limit

Schematic

bkdn

This subroutine forces a current and measures breakdown voltage on a two-terminal device.

Usage

double bkdn(int hi, int lo, int sub, double ipgm, double vlim);

Details

If a positive substrate pin is specified, the substrate is grounded. If a positive substrate pin is not specified, the substrate is left floating.

A delay is incorporated into the bkdn subroutine; this delay is the calculated time required for stable

Source-measure units (SMUs)

forcing of ipgm within the vlim voltage limit.

 SMU1: Forces ipgm, programmable voltage limit, measures breakdown voltage

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Example

result = bkdn(hi, lo, sub, ipgm, vlim);

Input

The emitter pin of the device

Input

The base pin of the device

Input

The collector pin of the device

sub

Input

The substrate pin of the device

ipgm

Input

The forced collector-base current (ICB), in amperes

vlim

Input

The collector voltage limit, in volts

type

Input

Type of transistor: "N" or "P"

Returns

Output

Collector-base voltage:

 -1.0 = TYPE not "N" or "P"  +2.0E + 21 = Voltage limit reached; measured voltage is within

98 % of the specified voltage limit (vlim)

Schematic

bvcbo

This subroutine forces a collector current (I emitter open.

Usage

double bvcbo(int e, int b, int c, int sub, double ipgm, double vlim, char type);

Details

) and measures the collector-base breakdown voltage (VCB) with the

CBO

If a positive substrate pin is specified, the substrate is grounded. If a positive substrate pin is not specified, the substrate is left floating.

A delay is incorporated into the bvcbo subroutine; this delay is the calculated time required for stable forcing of ipgm within the vlim voltage limit.

V/I polarities

The polarity of ipgm is determined by the device type.

Source-measure units (SMUs)

 SMU1: Forces I

, programmed voltage limit, measures bvcbo

CBO

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Example

result = bvcbo(e, b, c, sub, ipgm, vlim, type);

Input

The emitter pin of the device

Input

The base pin of the device

Input

The collector pin of the device

sub

Input

The substrate pin of the device

vcbmin

Input

The starting collector-base voltage (VCB), in volts

vcbmax

Input

The ending VCB, in volts

nstep

Input

The number of voltage steps

ipgm

Input

The targeted collector-base current (ICB), in amperes

udelay

Input

Delay between VCB steps, in seconds

type

Input

Type of transistor: "N" or "P"

Returns

Output

Collector-base voltage:

 -1.0 = TYPE not "N" or "P"  +1.0E + 21 = Device triggered on vcbmin  +2.0E + 21 = Device triggered on vcbmax

Schematic

bvcbo1

This subroutine uses the bsweepv LPTLib function to measure collector-base breakdown voltage at a specified current with the emitter open.

Usage

double bvcbo1(int e, int b, int c, int sub, double vcbmin, double vcbmax, int

nstep, double ipgm, double udelay, char type);

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Details

Result = bvcbo1(e, b, c, sub, vcbmin, vcbmax, nstep, ipgm, udelay, type);

This subroutine sweeps the collector-base voltage from vcbstart to vcbstop while monitoring the collector current with the emitter open. When the programmed current level (ipgm) is reached, the last collector-base voltage increment is returned as BVCBO1.

If a positive substrate pin is specified, the substrate is grounded. If a positive substrate pin is not specified, the substrate is left floating.

The udelay parameter should be programmed to approximate c * vcbmax / ipgm, where c = junction capacitance of the device under test.

V/I polarities

The polarities of vcbmin, vcbmax, and ipgm are determined by device type.

Source-measure units (SMUs)

Example

Schematic

 SMU1: Forces V

, programmed current limit = 1.25 * ipgm, measures collector current (I

CBO

)

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bvceo

Input

The emitter pin of the device

Input

The base pin of the device

Input

The collector pin of the device

sub

Input

The substrate pin of the device

ipgm

Input

The forced collector-emitter current (ICE), in amperes

vlim

Input

The collector voltage limit, in volts

type

Input

Type of transistor: "N" or "P"

Returns

Output

Collector-emitter voltage:

 -1.0 = TYPE not "N" or "P"  +2.0E + 21 = Voltage limit reached; measured voltage is within

98 % of the specified voltage limit (vlim)

result = bvceo(e, b, c, sub, ipgm, vlim, type);

This subroutine measures the collector-emitter breakdown voltage (VCE) when the collector current (IC) is forced with the base terminal left open.

Usage

double bvceo(int e, int b, int c, int sub, double ipgm, double vlim, char type);

Details

If a positive substrate pin is specified, the substrate is grounded. If a positive substrate pin is not specified, the substrate is left floating.

A delay is incorporated into the bvceo subroutine; this delay is the calculated time required for stable forcing of ipgm within the vlim voltage limit.

V/I polarities

The polarity of ipgm is determined by the device type.

Source-measure units (SMUs)

 SMU1: Forces I

Example

Schematic

, programmed voltage limit, measures bvceo

CEO

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bvceo2

Input

The emitter pin of the device

Input

The base pin of the device

Input

The collector pin of the device

sub

Input

The substrate pin of the device

vcemin

Input

The starting collector-emitter voltage (VCE), in volts

vcemax

Input

The ending VCE, in volts

nstep

Input

The number of voltage steps

ipgm

Input

The targeted collector-emitter current (ICE), in amperes

udelay

Input

The delay between VCE steps, in seconds

type

Input

Type of transistor: "N" or "P"

Returns

Output

Collector-emitter voltage:

 -1.0 = TYPE not "N" or "P"  +1.0E + 21 = Device triggered on vcemin  +2.0E + 21 = Device triggered on vcemax

This subroutine measures collector-emitter breakdown voltage using the bsweepV LPTLib function.

Usage

double bvceo2(int e, int b, int c, int sub, double vcemin, double vcemax, int

nstep, double ipgm, double udelay, char type);

Details

This subroutine sweeps VCE from vcemin to vcemax while monitoring the collector current with the base open. When the specified current level (ipgm) is reached, the last collector-emitter voltage increment is returned as bvceo2.

If a positive substrate pin is specified, the substrate is grounded. If a positive substrate pin is not specified, the substrate is left floating.

Set the udelay parameter to approximate C * vcemax / ipgm, where C = Junction capacitance of the device under test.

V/I polarities

The polarities of vcemin, vcemax, and ipgm are determined by device type.

Source-measure units (SMUs)

 SMU1: Forces V

, programmed current limit = 1.25 *ipgm, measures I

CEO

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Example

result = bvceo2(e, b, c, sub, vcemin, vcemax, nstep, ipgm, udelay, type);

Input

The emitter pin of the device

Input

The base pin of the device

Input

The collector pin of the device

sub

Input

The substrate pin of the device

ipgm

Input

The forced I

CES

, in amperes

vlim

Input

The collector voltage limit, in volts

type

Input

Type of transistor: "N" or "P"

Returns

Output

Collector-emitter/base voltage:

 -1.0 = TYPE not "N" or "P"  +2.0E + 21 = Voltage limit reached; measured voltage is within

98 % of the specified voltage limit (vlim)

Schematic

bvces

This subroutine measures the collector-emitter/base breakdown voltage by forcing a collector current (I

Usage

double bvces(int e, int b, int c, int sub, double ipgm, double vlim, char type);

Details

CES

This subroutine measures collector-to-emitter breakdown voltage at a specified current with the base shorted to the emitter.

If a positive substrate pin is specified, the substrate will be grounded. If a positive substrate pin is not specified, it is left floating.

A delay is incorporated into the bvces subroutine; this delay is the calculated time required for stable forcing of ipgm within the vlim voltage limit.

V/I polarities

The polarity of ipgm is determined by the device type.

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Source-measure units (SMUs)

resu1t = bvces(e, b, c, sub, ipgm, vlim, type);

Input

The emitter pin of the device

Input

The base pin of the device

Input

The collector pin of the device

sub

Input

The substrate pin of the device

vcemin

Input

The starting collector-emitter voltage (VCE), in volts

vcemax

Input

The ending VCE, in volts

nstep

Input

The number of voltage steps

ipgm

Input

The targeted collector-emitter current (ICE), in amperes

udelay

Input

The delay between VCE steps, in seconds

type

Input

Type of transistor: "N" or "P"

Returns

Output

Collector-emitter voltage:

 -1.0 = TYPE not "N" or "P"  +1.0E + 21 = Device triggered on vcemin  +2.0E + 21 = Device triggered on vcemax

 SMU1: Forces I

, programmed voltage limit, measures bvces

CES

Example

Schematic

bvces1

This subroutine measure the collector-emitter breakdown voltage using the bsweepV LPTLib function.

Usage

double bvces1(int e, int b, int c, int sub, double vcemin, double vcemax, int

nstep, double ipgm, double udelay, char type);

+ 65 hidden pages

Keithley S530 User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual

Safety precautions

Table of Contents

General information

Introduction

Manual contents

Contact information

Using the test subroutine library

How to use the library reference

Categorized subroutine lists

Bipolar subroutines

Resistors, diodes, capacitors, and special structure subroutines

MOSFET subroutines

FET and JFET subroutines

Math and support subroutines

Test subroutine library reference

Subroutine descriptions

beta1

beta2

beta2a

beta3a

bice

bkdn

bvcbo

bvcbo1

bvceo

bvceo2

bvces

bvces1