KEC TIP42CF Datasheet

2002. 6. 25 1/2
SEMICONDUCTOR
TECHNICAL DATA
TIP42CF
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
Complementary to TIP41CF.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-100 V
Collector-Emitter Voltage
V
CEO
-100 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
DC
I
C
-6 A
Pulse
I
CP
-10
Base Current
I
B
-2 A
Collector Power Dissipation
Ta=25
P
C
2 W
Tc=25
25 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Emitter Sustaining Voltage
V
CEO(SUS)
IC=-30mA, IB=0
-100 - - V
Collector Cut-off Current
I
CEO
VCE=-60V, IB=0
- - -0.7 mA
Collector Cut-off Current
I
CES
VCE=-100V, VEB=0
- - -400
A
Emitter Cut-off Current
I
EBO
VEB=-5V, IC=0
- - -1 mA
DC Current Gain
h
FE
VCE=-4V, IC=-0.3A
30 - -
VCE=-4V, IC=-3A
15 - 75
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-6A, IB=-600mA
- - -1.5 V
Base-Emitter On Voltage
V
BE(on)
VCE=-4V, IC=-6A
- - -2.0 V
Transition Frequency
f
T
VCE=-10V, IC=-500mA
3.0 - - MHz
A
U
E
L
K
D
N
T
O
1
F
B
G
L
M
J
D
N
T
3
2
Q
C
P
S
T
V
1. BASE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
A
B
C
D
E
F
G 12.30 MAX
R
J
K
L
M
N
O
P
Q
R
H
S
T
U
10.30 MAX
15.30 MAX
2.70Ź0.30
0.85 MAX
Φ3.20Ź0.20
3.00Ź0.30
0.75 MAXH
13.60Ź0.50
3.90 MAX
1.20
1.30
2.54
4.50Ź0.20
6.80
2.60Ź0.20
10Ɓ
25Ş
5Ş
0.5
2.60Ź0.15V
TO-220IS
2002. 6. 25 2/2
TIP42CF
Revision No : 0
FE C
1k
300
FE
100
30
10
DC CURRENT GAIN h
3
1
-0.01
-0.1 -1 -10
COLLECTOR CURRENT I (A)
P - Ta
C
30
C
25
20
15
10
5
0
0
COLLECTOR POWER DISSIPATION P (W)
50 100 150 200
AMBIENT TEMPERATURE Ta ( C)
V =-4V
CE
C
V ,V - Ih - I
CE(sat) BE(sat) C
-2.0
-1.6
-1.2
BE(sat)
-0.8
CE(sat)
V , V (V)
-0.4
SATURATION VOLTAGE
V
0
-0.1-0.01
COLLECTOR CURRENT I (A)
SAFE OPERATING AREA
-30
I MAX.(PULSE)
C
COLLECTOR CURRENT I (A)
C
-10
I MAX.
C
(CONTIN
-UOUS)
-3
-1
SINGLE NONREPETITIVE
*
PULSE Tc=25 C
-0.3
CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE
-0.1
-1
-3 -100
COLLECTOR-EMITTER VOLTAGE V (V)
BE(sat)
V
-1 -10 -100
C
*
0.5mS
1mS
5mS
DC O
PERA
TIN
*
*
G
-10 -300-30
I /I =10
B
C
CE(sat)
*
CE
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