KEC TIP33C Datasheet
SEMICONDUCTOR
TIP33C
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
ᴌ
Complementary to TIP34C.
ᴌRecommended for 45Wᴕ50W Audio Frequency
Amplifier Output Stage.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
(Tc=25ᴱ)
Junction Temperature
Storage Temperature Range
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
100 V
100 V
6 V
10 A
3 A
80 W
150
-55ᴕ150
ᴱ
ᴱ
EPITAXIAL PLANAR NPN TRANSISTOR
A
E
D
d
P
123
Q
F
J
PT
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
B
K
I
C
H
G
L
M
MILLIMETERSDIM
A 15.9 MAX
B 4.8 MAX
C 20.0 0.3
D 2.0 0.3
d 1.0+0.3/-0.25
E2.0
F1.0
G 3.3 MAX
H9.0
I4.5
J
K 1.8 MAX
L 20.5 0.5
P 5.45 0.2
Q
T 0.6+0.3/-0.1
_
+
_
+
2.0
_
+
2.8M
_
+
_
Φ3.2 0.2
+
TO-3P(N)
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Note : hFEClassification R:55~110, O:80~160
I
CBO
I
EBO
V
(BR)CEO
h
(Note) VCE=4V, IC=2A
FE
V
CE(sat)
f
C
VCB=100V, IE=0
VEB=6V, IC=0
IC=25mA, IB=0
- - 10
- - 10
ỌA
ỌA
100 - - V
55 - 160
IC=4A, IB=0.4A
T
ob
VCE=12V, IC=0.5A
VCB=10V, IE=0, f=1MHz
- - 1.0 V
- 20 - MHz
- 150 - pF
2001. 1. 10 1/2
Revision No : 1
TIP33C
K
V - I
CE(sat)
1
COMMON EMITTER
I /C =10
0.5
C B
0.3
CE(sat)
0.1
0.05
0.03
VOLTAGE V (V)
0.01
COLLECTOR-EMITTER SATURATION
0.001
0.01
0.1 1 10
BASE CURRENT I (A)
h - I
FE C
1K
500
FE
300
Tc=125 C
100
Tc=25 C
=-3
c
T
0
50
30
DC CURRENT GAIN h
10
COLLECTOR CURRENT I (A)
C
10
CURVES SHOULD BE APPLIED IN
THERMAL LIMITED AREA.
5
(SIGLE NONREPETITIVE PULSE)
r - t
th w
3
1
th
r ( C/W)
0.5
NO HEAT SINK
0.3
0.1
TRANSITION THERMAL RESISTANCE
C
1
3
10
PULSE WIDTH t (sec)
100 300 1K
30
w
2
f - I
TE
V =4V
CE
C
30
T
20
=125 C
c
T
c
T
25
=
=-30 C
Tc
C
V =-12V
CE
10
CUT-OFF FREQUENCY f (MHz)
0.10.001 0.01
C
101
0
-0.01
-0.03
-0.3-0.1
EMITTER CURRENT I (A)
-1 -3 -10
E
SAFE OPERATING AREA
Pc - Ta
100
C
80
60
40
20
0
MAXIMUM POWER DISSIPATION P (W)
0255075 125
AMBIENT TEMPERATURE Ta ( C)
2001. 1. 10 2/2
Tc=Ta
INFINITE HEAT SINK
C
COLLECTOR CURRENT I (A)
100 150
Revision No : 1
-30
I MAX.(PULSED)*
C
-10
I MAX
-5
(CONTINUOUS)
-3
C
DC OP
Tc=25
ER
10
1
mS
*
A
TIO
C
N
-1
-0.5
-0.3
SINGLE NONREPETITIVE
*
-0.1
-0.05
PLUSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
-0.03
-1 -3 -100
-10 -30
COLLECTOR-EMITTER VOLTAGE V (V)
30
0
µS*
.0
m
S*
-200
CE
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