KEC TIP117F Datasheet

2002. 6. 25 1/2

SEMICONDUCTOR

TECHNICAL DATA

TIP1 17F

EPITAXIAL PLANAR PNP TRANSISTOR

Revision No : 0

MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.

FEATURES

High DC Current Gain.

: h

FE

=1000(Min.), VCE=-4V, IC=-1A.

Low Collector-Emitter Saturation Voltage.
Complementary to TIP112F.

MAXIMUM RATING (Ta=25 )

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC SYMBOL RATING UNIT

Collector-Base Voltage

V

CBO

-100 V

Collector-Emitter Voltage

V

CEO

-100 V

Emitter-Base Voltage

V

EBO

-5 V

Collector Current

DC

I

C

-2
A

Pulse

I

CP

-4

Base Current DC

I

B

-50 mA

Collector Power
Dissipation

Ta=25

P

C

2

W

Tc=25

20

Junction Temperature

T

j

150

Storage Temperature Range

T

stg

-65 150

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Collector Cut-off Current

I

CEO

VCE=-50V, IB=0

- - -2
mA

I

CBO

VCB=-100V, IE=0

- - -1

Emitter Cut-off Current

I

EBO

VEB=-5V, IC=0

- - -2 mA

DC Current Gain

h

FE

VCE=-4V, IC=-1A

1000 - -

VCE=-4V, IC=-2A

500 - -

Collector-Emitter Sustaining Voltage

V

CEO(SUS)IC

=-30mA, IB=0

-100 - - V

Collector-Emitter Saturation Voltage

V

CE(sat)

IC=-2A, IB=-8mA

- - -2.5 V

Base-Emitter On Voltage

V

BE(ON)

VCE=-4V, IC=-2A

- - -2.8 V

Collector Output Capacitance

C

ob

VCB=-10V, IE=0, f=0.1MHz

- - 200 pF

EQUIVALENT CIRCUIT

A

U

E

L

K

D

N

T

O

1

F

B

G

L

M

J

D

N

T

3

2

Q

TO-220IS

C

P

S

T

V

1. BASE

2. COLLECTOR

3. EMITTER

DIM MILLIMETERS

A

B

C

D

E

F

G 12.30 MAX

R

J

K

L

M

N

O

P

Q

R

H

S

T

U

10.30 MAX

15.30 MAX

2.70Ź0.30

0.85 MAX

Φ3.20Ź0.20

3.00Ź0.30

0.75 MAXH

13.60Ź0.50

3.90 MAX

1.20

1.30

2.54

4.50Ź0.20

6.80

2.60Ź0.20

10Ɓ

25Ş

5Ş

0.5

2.60Ź0.15V

C

B

R

1

= =

10kΩ

R

0.6kΩ

2

E

2002. 6. 25 2/2

TIP1 17F

Revision No : 0

I - V

CCE

-5

C

-4

-900µA

-800µA

-700µA

-3

-600µA

-1000µA

-2

-1

COLLECTOR CURRENT I (A)

0

-1

-2 -3 -4 -5

COLLECTOR-EMITTER VOLTAGE V (V)

V , V - I

100

30

h - I

FE C

-500µA

-400µA

-300µA

-200µA

I =-100µA

B

FE

100K

30K

10K

300

V =-4V

CE

100

DC CURRENT GAIN h

30

10

-0.01

CE

CE(sat)BE(sat)

C

I /I =500

C

B

1k

500

-0.1 -1 -10

COLLECTOR CURRENT I (A)

C - V

ob

C

CB

f=0.1MHz

300

10

CE(sat)

3

1

BE(sat)

V ,V (V)

0.3

SATURATION VOLTAGE

0.1

0.01

0.1 1 10

COLLECTOR CURRENT I (A)

30

25

D

20

15

10

5

POWER DISSIPATION P (W)

0

0

50 100 150 200

CASE TEMPERATURE Ta ( C)

V

BE(sat)

V

CE(sat)

P - Ta

D

ob

100

50
30

10

5

CAPACITANCE C (pF)

3

1

-0.01

C

-0.1

COLLECTOR-BASE VOLTAGE V (V)

-1

-10

-100

CB

SAFE OPERATING AREA

10

I MAX(PULSED)

5

C

3

C

DC OPERATION

Tc=25 C

1

0.5

0.3

COLLECTOR CURRENT I (A)

SINGLE NONREPETITIVE
PULSE Tc=25 C

CURVES MUST BE DERATED
LINEARLY WITH
TEMPERATURE

INCREASE IN

0.1
3 10 30 50 100

51

COLLECTOR-EMITTER VOLTAGE V (V)

1ms

5

ms

CE