KEC TIP117 Datasheet
SEMICONDUCTOR
TIP117
TECHNICAL DATA
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES
ᴌHigh DC Current Gain.
: h
=1000(Min.), VCE=-4V, IC=-1A.
FE
ᴌLow Collector-Emitter Saturation Voltage.
ᴌComplementary to TIP112.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC
Collector Current
Pulse
Base Current DC
Collector Power
Dissipation
Ta=25ᴱ
Tc=25ᴱ
Junction Temperature
Storage Temperature Range
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
-100 V
-100 V
-5 V
-2
-4
-50 mA
2
P
C
T
j
T
stg
50
150
-65ᴕ150
W
ᴱ
ᴱ
EPITAXIAL PLANAR PNP TRANSISTOR
A
R
S
E
D
Q
H
L
C
MM
K
123
J
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
F
B
G
C
N
O
P
DIM MILLIMETERS
10.30 MAX
A
B
15.30 MAX
C
Φ3.60 0.20
D
T
E
F
13.60 0.50
G
H
J
K
L
M
N
O
P
Q1.50
R 9.50 0.20
S 8.00 0.20
T 2.90 MAX
0.80
_
+
3.00
6.70 MAX
_
+
5.60 MAX
1.37 MAX
0.50
1.50 MAX
2.54
4.70 MAX
2.60
1.50 MAX
_
+
_
+
A
TO-220AB
EQUIVALENT CIRCUIT
C
B
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Output Capacitance
V
I
CEO
I
CBO
I
EBO
h
FE
CEO(SUS)IC
V
CE(sat)
V
BE(ON)
C
ob
VCE=-50V, IB=0
VCB=-100V, IE=0
VEB=-5V, IC=0
VCE=-4V, IC=-1A
VCE=-4V, IC=-2A
=-30mA, IB=0
IC=-2A, IB=-8mA
VCE=-4V, IC=-2A
VCB=-10V, IE=0, f=0.1MHz
R
1
= =
10kΩ
R
0.6kΩ
2
E
- - -2
mA
- - -1
- - -2 mA
1000 - -
500 - -
-100 - - V
- - -2.5 V
- - -2.8 V
- - 200 pF
1999. 11. 16 1/2
Revision No : 1
TIP117
I - V
CCE
-5
C
-4
-900µA
-800µA
-700µA
-3
-600µA
-1000µA
-2
-1
COLLECTOR CURRENT I (A)
0
-1
-2 -3 -4 -5
COLLECTOR-EMITTER VOLTAGE V (V)
V , V - I
100
30
h - I
FE C
-500µA
-40
-300µA
-200µA
I =-100µA
B
100K
µA
0
FE
30K
10K
300
V =-4V
CE
100
DC CURRENT GAIN h
30
10
-0.01
CE
CE(sat)BE(sat)
C
I /I =500
C
B
1k
500
-0.1 -1 -10
COLLECTOR CURRENT I (A)
C - V
ob
C
CB
f=0.1MHz
300
10
CE(sat)
3
1
BE(sat)
V ,V (V)
0.3
SATURATION VOLTAGE
0.1
0.01
0.1 1 10
COLLECTOR CURRENT I (A)
80
70
D
60
50
40
30
20
10
POWER DISSIPATION P (W)
0
0
50 100 150 200
CASE TEMPERATURE Ta ( C)
V
BE(sat)
V
CE(sat)
P - Ta
D
ob
100
50
30
10
5
CAPACITANCE C (pF)
3
1
-0.01
C
-0.1
COLLECTOR-BASE VOLTAGE V (V)
-1
-10
-100
CB
SAFE OPERATING AREA
10
I MAX(PULSED)
5
C
3
C
N
IO
T
A
R
E
P
DC O
Tc=25 C
1
0.5
0.3
COLLECTOR CURRENT I (A)
SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH
TEMPERATURE
0.1
3103050100
51
COLLECTOR-EMITTER VOLTAGE V (V)
INCREASE IN
5ms
1ms
CE
1999. 11. 16 2/2
Revision No : 1
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