KEC TIP112F Datasheet

2002. 6. 25 1/2

SEMICONDUCTOR

TECHNICAL DATA

TIP1 12F

EPITAXIAL PLANAR NPN TRANSISTOR

Revision No : 0

MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.

FEATURES

High DC Current Gain.

: h

FE

=1000(Min.), VCE=4V, IC=1A.

Low Collector-Emitter Saturation Voltage.
Complementary to TIP117F.

MAXIMUM RATING (Ta=25 )

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC SYMBOL RATING UNIT

Collector-Base Voltage

V

CBO

100 V

Collector-Emitter Voltage

V

CEO

100 V

Emitter-Base Voltage

V

EBO

5 V

Collector Current

DC

I

C

2

A

Pulse

I

CP

4

Base Current DC

I

B

50 mA

Collector Power
Dissipation

Ta=25

P

C

2

W

Tc=25

20

Junction Temperature

T

j

150

Storage Temperature Range

T

stg

-65 150

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Collector Cut-off Current

I

CEO

VCE=50V, IB=0

- - 2
mA

I

CBO

VCB=100V, IE=0

- - 1

Emitter Cut-off Current

I

EBO

VEB=5V, IC=0

- - 2 mA

DC Current Gain

h

FE

VCE=4V, IC=1A

1000 - -

VCE=4V, IC=2A

500 - -

Collector-Emitter Sustaining Voltage

V

CEO(SUS)IC

=30mA, IB=0

100 - - V

Collector-Emitter Saturation Voltage

V

CE(sat)

IC=2A, IB=8mA

- - 2.5 V

Base-Emitter On Voltage

V

BE(ON)

VCE=4V, IC=2A

- - 2.8 V

Collector Output Capacitance

C

ob

VCB=10V, IE=0, f=0.1MHz

- - 100 pF

EQUIVALENT CIRCUIT

A

U

E

L

K

D

N

T

O

1

F

B

G

L

M

J

D

N

T

3

2

Q

TO-220IS

C

P

S

T

V

1. BASE

2. COLLECTOR

3. EMITTER

DIM MILLIMETERS

A

B

C

D

E

F

G 12.30 MAX

R

J

K

L

M

N

O

P

Q

R

H

S

T

U

10.30 MAX

15.30 MAX

2.70Ź0.30

0.85 MAX

Φ3.20Ź0.20

3.00Ź0.30

0.75 MAXH

13.60Ź0.50

3.90 MAX

1.20

1.30

2.54

4.50Ź0.20

6.80

2.60Ź0.20

10Ɓ

25Ş

5Ş

0.5

2.60Ź0.15V

C

B

R

1

= =

10kΩ

R

0.6kΩ

2

E

2002. 6. 25 2/2

TIP1 12F

Revision No : 0

I - V

C

2.0

450µA

C

1.6

500µA

1.2

0.8

0.4

COLLECTOR CURRENT I (A)

0

1

23 45

COLLECTOR-EMITTER VOLTAGE V (V)

V , V - I

100

30

400µA

350µA

CE(sat)BE(sat)

CE

300µA

250µA

200µA

I =150µA

B

CE

C

I /I =500

C

B

100K

30K

FE

10K

300

100

DC CURRENT GAIN h

30

10

0.01

COLLECTOR CURRENT I (A)

1k

500
300

h - I

FE

C

V =4V

CE

0.1 1 10

C

C - V

ob

CB

f=0.1MHz

10

CE(sat)

3

1

BE(sat)

V ,V (V)

0.3

SATURATION VOLTAGE

0.1

0.01

0.1 1 10

COLLECTOR CURRENT I (A)

30

25

D

20

15

10

5

POWER DISSIPATION P (W)

0

0

50 100 150 200

CASE TEMPERATURE Ta ( C)

V

BE(sat)

V

CE(sat)

P - Ta

D

ob

100

50
30

10

5
3

CAPACITANCE C (pF)

1

0.01

C

0.1

COLLECTOR-BASE VOLTAGE V (V)

1

10

CB

100

SAFE OPERATING AREA

10

I MAX(PULSED)

5

C

3

C

C OPERATION

D

Tc=25 C

1

0.5

0.3

COLLECTOR CURRENT I (A)

0.1

SINGLE NONREPETITIVE
PULSE Tc=25 C

CURVES MUST BE DERATED
LINEARLY WITH
TEMPERATURE

INCREASE IN

3103050100

51

COLLECTOR-EMITTER VOLTAGE V (V)

5ms

1ms

CE