SEMICONDUCTOR
TIP112
TECHNICAL DATA
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES
ᴌHigh DC Current Gain.
: h
=1000(Min.), VCE=4V, IC=1A.
FE
ᴌLow Collector-Emitter Saturation Voltage.
ᴌComplementary to TIP117.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC
Collector Current
Pulse
Base Current DC
Collector Power
Dissipation
Ta=25ᴱ
Tc=25ᴱ
Junction Temperature
Storage Temperature Range
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
100 V
100 V
5 V
2
4
50 mA
2
P
C
T
j
T
stg
50
150
-65ᴕ150
A
W
ᴱ
ᴱ
EPITAXIAL PLANAR NPN TRANSISTOR
A
R
S
E
D
Q
H
L
C
MM
K
123
J
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
F
B
G
C
N
O
P
DIM MILLIMETERS
10.30 MAX
A
B
15.30 MAX
C
Φ3.60 0.20
D
T
E
F
13.60 0.50
G
H
J
K
L
M
N
O
P
Q1.50
R 9.50 0.20
S 8.00 0.20
T 2.90 MAX
0.80
3.00
6.70 MAX
5.60 MAX
1.37 MAX
0.50
1.50 MAX
2.54
4.70 MAX
2.60
1.50 MAX
_
+
_
+
TO-220AB
EQUIVALENT CIRCUIT
C
B
_
+
_
+
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Output Capacitance
V
I
CEO
I
CBO
I
EBO
h
FE
CEO(SUS)IC
V
CE(sat)
V
BE(ON)
C
ob
VCE=50V, IB=0
VCB=100V, IE=0
VEB=5V, IC=0
VCE=4V, IC=1A
VCE=4V, IC=2A
=30mA, IB=0
IC=2A, IB=8mA
VCE=4V, IC=2A
VCB=10V, IE=0, f=0.1MHz
R
1
= =
10kΩ
R
0.6kΩ
2
E
- - 2
- - 1
- - 2 mA
1000 - -
500 - -
100 - - V
- - 2.5 V
- - 2.8 V
- - 100 pF
mA
1999. 11. 16 1/2
Revision No : 1
TIP112
I - V
2.0
450µA
C
1.6
500µA
1.2
0.8
0.4
COLLECTOR CURRENT I (A)
0
1
23 45
COLLECTOR-EMITTER VOLTAGE V (V)
V , V - I
100
30
C
400µA
350µA
CE(sat)BE(sat)
CE
300µA
250µA
200µA
I =150µA
B
CE
C
I /I =500
C
B
100K
30K
FE
10K
300
100
DC CURRENT GAIN h
30
10
0.01
COLLECTOR CURRENT I (A)
1k
500
300
h - I
FE
C
V =4V
CE
0.1 1 10
C
C - V
ob
CB
f=0.1MHz
10
CE(sat)
3
1
BE(sat)
V ,V (V)
0.3
SATURATION VOLTAGE
0.1
0.01
0.1 1 10
COLLECTOR CURRENT I (A)
80
70
D
60
50
40
30
20
10
POWER DISSIPATION P (W)
0
0
50 100 150 200
CASE TEMPERATURE Ta ( C)
V
BE(sat)
V
CE(sat)
P - Ta
D
ob
100
50
30
10
5
3
CAPACITANCE C (pF)
1
0.01
C
0.1
COLLECTOR-BASE VOLTAGE V (V)
1
10
CB
0
10
SAFE OPERATING AREA
10
I MAX(PULSED)
5
C
3
C
N
IO
T
A
R
PE
DC O
Tc=25 C
1
0.5
0.3
COLLECTOR CURRENT I (A)
SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH
TEMPERATURE
0.1
3103050100
51
COLLECTOR-EMITTER VOLTAGE V (V)
INCREASE IN
1m
5
s
ms
CE
1999. 11. 16 2/2
Revision No : 1
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