SEMICONDUCTOR
FEATURES
ᴌRepetitive Peak Off-state Voltage : V
ᴌR.M.S On-State Current : I
ᴌHigh Commutation (dv/dt)
ᴌIsolation Voltage : V
ISOL
(UL Recognized : E166398)
APPLICATIONS
ᴌSwitching Mode Power Supply
ᴌSpeed Control of Small Motors
ᴌSolid State Relay
ᴌLight Dimmer
ᴌWashing Machine
ᴌTemperature Control of Heater
=3A.
T(RMS)
=1500V AC
TECHNICAL DATA
=600V.
DRM
T3A6CI
Bi-Directional Triode Thyristor
3A Mold TRIAC
A
U
E
L
K
D
N
T
O
1
F
B
G
L
M
J
D
N
T
3
2
Q
P
S
T
1. T1
2. T2
3. GATE
C
MILLIMETERS
DIM
10.30 MAX
A
15.30 MAX
B
C
2.70Ź0.30
D
0.85 MAX
Ѹ3.20Ź0.20
E
F
3.00Ź0.30
12.30 MAX
G
0.75 MAX
H
R
V
H
13.60Ź0.50
J
K
3.90 MAX
L
1.20
1.30
M
N
2.54
4.50Ź0.20
O
6.80
P
2.60Ź0.20
Q
R
10Ɓ
S
25Ş
5Ş
T
U
0.5
V
2.60Ź0.15
MAXIMUM RATINGS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Non-Repetitive Peak Off-state Voltage
Repetitive Peak Off-state Voltage
R.M.S On-state Current
(Full Sine Waveform Tc=105ᴱ)
Peak One Cycle Surge On-state Current
(Non-Repetitive)
I2t Limit Value (1mS⏊t⏊10mS)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (Ac, t=1min.)
TO-220IS
V
DSM
V
DRM
I
T(RMS)
I
TSM
I2t 4.5 A2S
P
GM
P
G(AV)
V
GM
I
GM
T
j
T
stg
V
ISOL
700 V
600 V
3 A
30 (50Hz 1 Cycle)
33 (60Hz 1 Cycle)
3 W
0.3 W
10 V
1 A
-40ᴕ125
-40ᴕ125
1500 V
A
ᴱ
ᴱ
2001. 1. 3 1/3
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
T3A6CI
Repetitive Peak Off-state Current
Gate Trigger Voltage
Gate Trigger Current
Peak On-State Voltage
Gate Non-Trigger Voltage
Holding Current
Critical Rate of Rise of
Off-state Voltage
Critical Rate of Rise of
Off-state Voltage at commutation
Thermal Resistance
Ẑ
ẑ
Ẓ
ẓ
Ẑ
ẑ
Ẓ
ẓ
I
DRM
V
GT
I
GT
V
TM
V
GD
I
H
dV/d
(dV/dt)C
R
th(j-c)
V
DRM
VD=12V,
=20ή
R
L
ITM=4.5A
VD=Rated, Tc=125ᴱ
VD=12V, ITM=1A
Tj=125ᴱ, V
t
Exponential Rise
Tj=125ᴱ,
(di/dt)C=-2A/mS, V
=Rated
T2(+), Gate(+)
T2(+), Gate(-)
T2(-), Gate(-)
T2(-), Gate(+)
T2(+), Gate(+)
T2(+), Gate(-)
T2(-), Gate(-)
T2(-), Gate(+)
=Rated
DRM
D
=2/3V
DRM
- - 20
- - 1.5
- - 1.5
- - 1.5
- - 2.0
- - 5
- - 5
- - 5
- - 10
- - 1.5 V
0.2 - - V
- - 30 mA
- 100 -
10 - -
Junction to Case, AC - - 4.2
ỌA
V
mA
V/ỌS
V/ỌS
ᴱ/W
2001. 1. 3 2/3
Revision No : 0
T3A6CI
GATE TRIGGER CHARACTERISTIC
1
10
G
INSTANTANEOUS GATE VOLTAGE V (V)
PEAK GATE
VOLTAGE
GATE TRIGGER VOLTAGE
0
10
25 C
GATE NON TRIGGER VOLTAGE
-1
10
01
10
10 10
INSTANTANEOUS GATE CURRENT I (mA)
AVERAGE GATE DISSIPATIO
2
SURGE ON-STATE CURRENT(60Hz)
50
40
30
20
10
SURGE ON CURRENT (A)
0
10
NUMBER OF CYCLES AT 60Hz
10
TIME
ι - ν
TT
(A)
2
10
T =25 C
j
1
10
T
ι
0
10
-1
10
1.81.41.00.6
2.2 2.6 3.0
INSTANTANEOUS ON-STATE VOLTAGE ν (V)
Ta MAX - I
T(RMS)
T
PE
DI
A
S
K GA
SI
PA
T
T
E
IO
CURRENT
PEAK GATE
N
N
3
10
G
INSTANTANEOUS ON-STATE CURRENT
140
120
100
80
60
40
20
TEMPERATURE Ta MAX ( C)
2
1010
MAXIMUM ALLOWABLE AMBIENT
0
R.M.S ON-STATE CURRENT I (A)
2.42.01.60 0.4 0.8 1.2
T(RMS)
Tc MAX - I
140
120
100
80
60
40
20
TEMPERATURE Tc MAX ( C)
MAXIMUM ALLOWABLE CASE
0
5.0
4.0
3.0
2.0
th(j-c)
r ( C-W)
1.0
R.M.S ON-STATE CURRENT I (A)
TRANSIENT THERMAL IMPEDANCE
(JUNCTION TO CASE)
T(RMS)
T(RMS)
P - I
T(RMS)T(AV)
8
7
6
5
T(AV)
4
3
2
DISSIPATION P (W)
1
AVERAGE ON-STATE POWER
0
420
R.M.S ON-STATE CURRENT I (A)
456
3210
T(RMS)
TRANSIENT THERMAL IMPEDANCE
2001. 1. 3 3/3
0
-1
10
0
10 10
NUMBER OF CYCLES AT 60Hz
12
10 10
TIME
3
Revision No : 0
Loading...