KEC T1A6C Datasheet
SEMICONDUCTOR
TECHNICAL DATA
AC POWER CONTROL APPLICATION.
T1A6C
Bi-Directional Triode Thyristor
1A Mold TRIAC
FEATURES
ᴌRepetitive Peak Off-state Voltage : V
ᴌR.M.S on-State Current : I
T(RMS)
=1A.
ᴌHigh Commutation (dv/dt)
APPLICATIONS
ᴌSwitching Mode Power Supply
ᴌSpeed Control of Small Motors
ᴌSolid State Relay
ᴌLight Dimmer
ᴌWashing Machine
ᴌTemperature Control of Heater
DRM
=600V.
B
K
D
F
1 2
L
E
G
H
F
C
3
M
AJ
1. T1
2. GATE
3. T2
C
DIM MILLIMETERS
N
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
1.00
E
F
1.27
G
0.85
H
0.45
J
K
L
_
14.00 0.50
+
0.55 MAX
2.30
0.45 MAXM
1.00N
TO-92
MAXIMUM RATINGS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Non-Repetitive Peak Off-state Voltage
Repetitive Peak Off-state Voltage
R.M.S On-state Current
(Full Sine Waveform Tc=56ᴱ)
Peak One Cycle Surge On-state Current
(Non-Repetitive)
I2t Limit Value (1mS⏊t⏊10mS)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
V
DSM
V
DRM
I
T(RMS)
I
TSM
700 V
600 V
1 A
9 (50Hz 1 Cycle)
10 (60Hz 1 Cycle)
I2t 0.4 A2S
P
P
V
GM
G(AV)
GM
I
GM
T
j
1 W
0.1 W
6 V
0.5 A
-40ᴕ125
A
ᴱ
2001. 5. 9 1/3
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
T1A6C
Repetitive Peak Off-state Current
Gate Trigger Voltage
Gate Trigger Current
Peak On-State Voltage
Gate Non-Trigger Voltage
Holding Current
Critical Rate of Rise of
Off-state Voltage at Commutation
Thermal Resistance
Ẑ
ẑ
Ẓ
ẓ
Ẑ
ẑ
Ẓ
ẓ
I
DRM
V
GT
I
GT
V
TM
V
GD
I
H
(dV/dt)C
R
th(j-c)
R
th(j-a)
V
=Rated
DRM
T2(+), Gate(+)
T2(+), Gate(-)
T2(-), Gate(-)
VD=12V,
=20ή
R
L
T2(-), Gate(+)
T2(+), Gate(+)
T2(+), Gate(-)
T2(-), Gate(-)
T2(-), Gate(+)
ITM=1.5A
VD=Rated, Tc=125ᴱ
VD=12V, ITM=1A
Tj=125ᴱ,
(di/dt)C=-0.5A/mS, V
=2/3V
D
DRM
- - 10
- - 2.0
- - 2.0
- - 2.0
- - 2.0
- - 5.0
- - 5.0
- - 5.0
- - 10
- - 1.6 V
0.2 - - V
- - 10 mA
2.0 - -
Junction to Case, AC - - 40
Junction to Ambient, AC - - 180
ỌA
V
mA
V/ỌS
ᴱ/W
2001. 5. 9 2/3
Revision No : 2
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