KEC MPSA43, MPSA42 Datasheet

SEMICONDUCTOR

MPSA42/43

HIGH VOLTAGE APPLICATION.

TELEPHONE APPLICATION.

FEATURES

ᴌComplementary to MPSA92/93.

MAXIMUM RATING (Ta=25ᴱ)

CHARACTERISTIC SYMBOL RATING UNIT

Collector-Base

Voltage

Collector-Emitter

Voltage

Emitter-Base Voltage

Collector Current

Emitter Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

MPSA42

MPSA43 200

MPSA42

MPSA43 200

TECHNICAL DATA

V

CBO

V

CEO

V

EBO

I

C

I

E

P

C

T

j

T

stg

300

300

6.0 V

500 mA

-500 mA

625 mW

150

-55ᴕ150

V

V

ᴱ

ᴱ

EPITAXIAL PLANAR NPN TRANSISTOR

B

K

D

F

1 2

L

E

G

H

F

C

3

M

AJ

1. EMITTER

2. BASE

3. COLLECTOR

C

DIM MILLIMETERS

N

A

4.70 MAX

B

4.80 MAX

C

3.70 MAX

D

0.45

1.00

E
F

1.27

G

0.85

H

0.45

J
K

L

_

14.00 0.50

+

0.55 MAX

2.30

0.45 MAXM

1.00N

TO-92

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Collector Cut-off

Current

Emitter Cut-off

Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

Collector Output

Capacitance

*Pulse Test : Pulse Width⏊300ỌS, Duty Cycle⏊2.0%

MPSA42

V

MPSA43 200 - -

(BR)CBO

MPSA42

V

MPSA43 200 - -

(BR)CEOIC

MPSA42

I

MPSA43

CBO

MPSA42

I

MPSA43

EBO

* h

* V

CE(sat)IC

* V

BE(sat)IC

f

MPSA42

C

MPSA43 - - 4.0

IC=100ỌA, IE=0

V

300 - -

300 - -

=1.0mA, IB=0

VCB=200V, IE=0

VCB=160V, IE=0

VEB=6V, IC=0

VEB=4V, IC=0

IC=1.0mA, VCE=10V

FE

IC=10mA, VCE=10V

IC=30mA, VCE=10V

=20mA, IB=2.0mA

=20mA, IB=2.0mA

T

VCE=20V, IC=10mA, f=100MHz

- - 0.1

- - 0.1

- - 0.1

- - 0.1

40 - -

40 - -

40 - -

- - 0.5 V

- - 0.9 V

50 - - MHz

V

ỌA

ỌA

- - 3.0

ob

VCB=20V, IE=0, f=1MHz

pF

1999. 11. 30 1/2

Revision No : 3

MPSA42/43

300

V =10V

CE

FE

100

50

30

DC CURRENT GAIN h

10

1 3 30 100

COLLECTOR CURRENT I (mA)

100

50

30

T =125 C

T =25 C

T =-55 C

C

eb

j

j

j

C - V

FE C

10550

C

ob R

f - Ih - I

TC

100

T

50

30

10

TRANSITION FREQUENCY f (MHz)

COLLECTOR CURRENT I (mA)

I - V

CCE

1k

300

C

100

Tc=25 C

100mS

30

T =25 C

j

V =20V

CE

f=20MHz

100µS

C

301031

1.0mS

100550

10µS

10

ob

C (pF)

5

3

COLLECTOR OUTPUT CAPACITANCE

1

310.30.1

REVERSE VOLTAGE V (V)

V V - I

BE(sat), CE(sat) C

1.4

1.2

T =25 C

j

1.0

0.8

CE(sat)

0.6

0.4

BE(sat),

V V (V)

SATURATION VOLTAGE

0.2

V @I /I =10

BE(sat)

V @V =10V

BE(on)

V @I /I =10

CE(sat)

CB

CE

BC

0

COLLECTOR CURRENT I (mA)

C

ob

10 30 100 200

R

5.0

301031

C

100550

10

3

COLLECTOR CURRENT I (mA)

CURVES APPLY

BELOW RATED V

1

CEO

0.5

0.5 1 3 10

COLLECTOR EMITTER VOLTAGE V (V)

Ta=25 C

MPSA43

MPSA42

30 100 500

CE

1999. 11. 30 2/2

Revision No : 3