KEC MPSA13, MPSA14 Datasheet
SEMICONDUCTOR
MPSA13/14
TECHNICAL DATA
GENERAL PURPOSE APPLICATIONS.
DARLINGTON TRANSISTOR.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
EPITAXIAL PLANAR NPN TRANSISTOR
B
K
D
V
CBO
V
CES
V
EBO
I
C
P
C
T
j
T
stg
30 V
30 V
10 V
500 mA
625 mW
150
-55ᴕ150
ᴱ
ᴱ
F
1 2
L
E
G
H
F
C
3
M
AJ
1. EMITTER
2. BASE
3. COLLECTOR
TO-92
C
DIM MILLIMETERS
N
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
1.00
E
F
1.27
G
0.85
H
0.45
J
K
L
_
14.00 0.50
+
0.55 MAX
2.30
0.45 MAXM
1.00N
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
Emitter Cut-off Current
MPSA13
MPSA14 10,000 - -
DC Current Gain
MPSA13
MPSA14 20,000 - -
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain Bandwith Product
V
V
CES
I
CBO
I
EBO
h
FE
CE(sat)
V
BE
f
T
IC=0.1mA
VCB=30V
VEB=10V
IC=10mA, VCE=5V
IC=100mA, VCE=5V
IC=100mA, IB=0.1mA
IC=100mA, VCE=5V
IC=10mA, f=100MHz, VCE=5V
30 - - V
- - 100 nA
- - 100 nA
5,000 - -
-
10,000 - -
- - 1.5 V
- - 2.0 V
125 - - MHz
2000. 2. 26 1/2
Revision No : 3
MPSA13/14
h - I
FE
200K
100K
FE
50K
30K
10K
DC CURRENT GAIN h
5K
3K
1
3 10 30 100 300 1K
COLLECTOR CURRENT I (A)
V (sat), V (sat) - I
BE
5
3
CE
1
BE
V (sat)
BE
V (sat)
CE
0.5
0.3
VOLTAGE V (sat), V (sat) (V)
COLLECTOR-EMITTER SATURATION
0.2
10 30 50 100 300 500
5
COLLECTOR CURRENT I (mA)
C
C
CE C
I =1000I
C
C
V =5V
CE
B
f - I
T
500
300
T
100
50
30
TRANSITION FREQUENCY f (MHz)
1
3 5 10 30 50 100
COLLECTOR CURRENT I (mA)
I - V
C
200
100
C
50
30
10
5
3
COLLECTOR CURRENT I (mA)
1
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8
BASE-EMITTER VOLTAGE V (V)
C
BE
C
V =5V
V =5V
CE
BE
CE
2000. 2. 26 2/2
Revision No : 3
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