KEC MPS8550 Datasheet
SEMICONDUCTOR
MPS8550
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURE
ᴌComplementary to MPS8050.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
EPITAXIAL PLANAR PNP TRANSISTOR
B
K
D
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
-40 V
-25 V
-6 V
-1.5 A
625 mW
150
-55ᴕ150
ᴱ
ᴱ
F
1 2
L
E
G
H
F
C
3
M
AJ
1. EMITTER
2. BASE
3. COLLECTOR
C
DIM MILLIMETERS
N
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
1.00
E
F
1.27
G
0.85
H
0.45
J
K
L
_
14.00 0.50
+
0.55 MAX
2.30
0.45 MAXM
1.00N
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
hFE(1) VCE=-1V, IC=-5mA
DC Current Gain
hFE(2) (Note) VCE=-1V, IC=-100mA
hFE(3) VCE=-1V, IC=-800mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
V
V
CE(sat)
BE(sat)
V
BE
f
T
C
ob
Note : hFE(2) Classification B:85ᴕ160 , C : 120ᴕ200 , D : 160ᴕ300
VCB=-35V, IE=0
VEB=-6V, IC=0
IC=-100ỌA, IE=0
IC=-2mA, IB=0
IC=-800mA, IB=-80mA
IC=-800mA, IB=-80mA
VCE=-1V, IC=-10mA
VCE=-10V, IC=-50mA
VCB=-10V, f=1MHz, IE=0
TO-92
- - -100 nA
- - -100 nA
-40 - - V
-25 - - V
45 170 -
85 160 300
40 80 -
- -0.28 -0.5 V
- -0.98 -1.2 V
- -0.66 -1.0 V
100 200 - MHz
- 15 - pF
1999. 10. 25 1/2
Revision No : 1
MPS8550
K
I - V
-0.5
-0.4
C
-0.3
-0.2
-0.1
COLLECTOR CURRENT I (mA)
0
-100
-50
-30
C
-10
-5
-3
-1
-0.5
-0.3
COLLECTOR CURRENT I (mA)
-0.1
-0.4 -0.8 -1.2 -1.6 -2.0
0
COLLECTOR-EMITTER VOLTAGE V (V)
I - V
CBE
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
BASE-EMITTER VOLTAGE V (V)
CEC
I =-4.0mA
B
I =-3.5mA
B
I =-3.0mA
B
I =-2.5mA
B
I =-2.0mA
B
I =-1.5mA
B
I =-1.0mA
B
I =-0.5mA
B
V =-1V
BE
h - I
FE C
1k
V =-1V
CE
500
FE
300
100
50
30
DC CURRENT GAIN h
10
-0.3 -10-3 -30
-0.1
CE
-1
COLLECTOR CURRENT I (mA)
-100
C
-300 -1
V V - I
BE(sat), CE(sat) C
CE
-3k
-5k
I =10I
C
B
-1k
V (sat)
-500
BE
-300
CE(sat)
-100
V (sat)
-50
BE(sat),
V V (mV)
-30
SATURATION VOLTAGE
CE
-10
-0.1
-0.3 -1 -3 -10 -30 -100
COLLECTOR CURRENT I (mA)
-300 -1K
C
f - I
TC
300
T
V =-10V
CE
100
50
30
C - V
ob
CB
f=1MHz
I =0
E
100
10
50
30
ob
C (pF)
5
3
10
TRANSITION FREQUENCY f (MHz)
-1 -3 -10 -100
1999. 10. 25 2/2
-5 -50
COLLECTOR CURRENT I (mA)
C
Revision No : 1
-300-30
1
COLLECTOR OUTPUT CAPACITANCE
-1 -5 -10 -50
-3 -30
COLLECTOR-BASE VOLTAGE V (V)
CB
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