KEC MPS8050S Datasheet
2003. 3. 25 1/2
SEMICONDUCTOR
TECHNICAL DATA
MPS8050S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
HIGH CURRENT APPLICATION.
FEATURE
Complementary to MPS8550S.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=35V, IE=0
- - 100 nA
Emitter Cut-off Current
I
EBO
VEB=6V, IC=0
- - 100 nA
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=100 A, IE=0
40 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=2mA, IB=0
25 - - V
DC Current Gain
hFE(1) VCE=1V, IC=5mA
45 135 -
hFE(2) (Note) VCE=1V, IC=100mA
85 160 300
hFE(3) VCE=1V, IC=800mA
40 110 -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=800mA, IB=80mA
- 0.28 0.5 V
Base-Emitter Saturation Voltage
V
BE(sat)
IC=800mA, IB=80mA
- 0.98 1.2 V
Base-Emitter Voltage
V
BE
VCE=1V, IC=10mA
- 0.66 1.0 V
Transition Frequency
f
T
VCE=10V, IC=50mA
100 190 - MHz
Collector Output Capacitance
C
ob
VCB=10V, f=1MHz, IE=0
- 9 - pF
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
40 V
Collector-Emitter Voltage
V
CEO
25 V
Emitter-Base Voltage
V
EBO
6 V
Collector Current
I
C
1.5 A
Collector Power Dissipation
PC *
350 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Note : hFE(2) Classification B:85 160 , C : 120 200 , D : 160 300
* PC: Package Mounted On 99.5% Alumina (10 8 0.6 )
E
B
LL
DIM MILLIMETERS
A
B
C
D
3
M
D
E
G 1.90
H
J
K
L
M
N
P7
J
C
H
N
2
1
PP
K
1. EMITTER
2. BASE
3. COLLECTOR
G
A
_
2.93 0.20
+
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
SOT-23
Marking
h Rank
Type Name
FE
Lot No.
BH
2003. 3. 25 2/2
MPS8050S
Revision No : 1
K
K
I - V
0.5
0.4
C
0.3
0.2
0.1
COLLECTOR CURRENT I (mA)
0
0
100
50
30
C
10
5
3
0.4 0.8 1.2 1.6 2.0
COLLECTOR-EMITTER VOLTAGE V (V)
I - V
CBE
CEC
I =3.0mA
I =2.5mA
I =2.0mA
I =1.5mA
I =1.0mA
I =0.5mA
h - I
FE C
1k
B
B
B
B
FE
500
300
100
V =1V
CE
50
B
30
DC CURRENT GAIN h
B
10
0.1
CE
1
0.3 10330
COLLECTOR CURRENT I (mA)
100
C
300 1
V =1V
CE
V V - I
BE(sat), CE(sat)
5k
3k
C
I =10I
C
B
1k
V (sat)
BE
CE(sat)
500
300
1
0.5
0.3
COLLECTOR CURRENT I (mA)
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2
BASE-EMITTER VOLTAGE V (V)
f - I
TC
300
T
100
50
30
BE
V =10V
CE
100
BE(sat),
50
V V (mV)
30
SATURATION VOLTAGE
10
0.1
0.3 1 3 10 30 100
COLLECTOR CURRENT I (mA)
100
50
30
10
ob
C (pF)
5
3
V (sat)
C - V
ob CB
CE
300 1
C
f=1MHz
I =0
E
10
TRANSITION FREQUENCY f (MHz)
1 3 10 100
550
COLLECTOR CURRENT I (mA)
C
30030
1
COLLECTOR OUTPUT CAPACITANCE
1 5 10 50
330
COLLECTOR-BASE VOLTAGE V (V)
CB
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