KEC MPS8050 Datasheet
SEMICONDUCTOR
MPS8050
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURE
ᴌComplementary to MPS8550.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
EPITAXIAL PLANAR NPN TRANSISTOR
B
K
D
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
40 V
25 V
6 V
1.5 A
625 mW
150
-55ᴕ150
ᴱ
ᴱ
F
1 2
L
E
G
H
F
C
3
M
AJ
1. EMITTER
2. BASE
3. COLLECTOR
C
DIM MILLIMETERS
N
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
1.00
E
F
1.27
G
0.85
H
0.45
J
K
L
_
14.00 0.50
+
0.55 MAX
2.30
0.45 MAXM
1.00N
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
V
V
hFE(2) (Note) VCE=1V, IC=100mA
I
CBO
I
EBO
(BR)CBO
(BR)CEO
VCB=35V, IE=0
VEB=6V, IC=0
IC=100ỌA, IE=0
IC=2mA, IB=0
hFE(1) VCE=1V, IC=5mA
hFE(3) VCE=1V, IC=800mA
V
V
CE(sat)
BE(sat)
V
BE
f
T
C
ob
IC=800mA, IB=80mA
IC=800mA, IB=80mA
VCE=1V, IC=10mA
VCE=10V, IC=50mA
VCB=10V, f=1MHz, IE=0
TO-92
- - 100 nA
- - 100 nA
40 - - V
25 - - V
45 135 -
85 160 300
40 110 -
- 0.28 0.5 V
- 0.98 1.2 V
- 0.66 1.0 V
100 190 - MHz
- 9 - pF
Note : hFE(2) Classification B:85ᴕ160 , C : 120ᴕ200 , D : 160ᴕ300
1999. 10. 25 1/2
Revision No : 1
MPS8050
K
K
I - V
0.5
0.4
C
0.3
0.2
0.1
COLLECTOR CURRENT I (mA)
0
0
100
50
30
C
10
5
3
0.4 0.8 1.2 1.6 2.0
COLLECTOR-EMITTER VOLTAGE V (V)
I - V
CBE
CEC
I =3.0mA
I =2.5mA
I =2.0mA
I =1.5mA
I =1.0mA
I =0.5mA
h - I
FE C
1k
B
B
B
B
FE
500
300
100
V =1V
CE
50
B
B
30
DC CURRENT GAIN h
10
0.3 10330
0.1
CE
1
COLLECTOR CURRENT I (mA)
100
C
300 1
V =1V
CE
V V - I
BE(sat), CE(sat)
5k
3k
C
I =10I
C
B
1k
CE(sat)
500
300
V (sat)
BE
1
0.5
0.3
COLLECTOR CURRENT I (mA)
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2
BASE-EMITTER VOLTAGE V (V)
f - I
T
300
T
100
50
30
10
TRANSITION FREQUENCY f (MHz)
1 3 10 100
550
COLLECTOR CURRENT I (mA)
100
BE(sat),
50
V V (mV)
SATURATION VOLTAGE
30
V (sat)
CE
10
BE
0.1
0.3 1 3 10 30 100
COLLECTOR CURRENT I (mA)
300 1
C
C - V
C
100
V =10V
CE
50
ob CB
f=1MHz
I =0
E
30
10
ob
C (pF)
5
3
1
30030
COLLECTOR OUTPUT CAPACITANCE
C
1 5 10 50
COLLECTOR-BASE VOLTAGE V (V)
330
CB
1999. 10. 25 2/2
Revision No : 1
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