2003. 7. 24 1/2
SEMICONDUCTOR
TECHNICAL DATA
MJE13003
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 7
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE AND HIGH SPEED
SWITCHING APPLICATION.
FEATURES
Excellent Switching Times
: t
on
=1.1 S(Max.), tf=0.7 S(Max.), at IC=1A
High Collector Voltage : V
CBO
=700V.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
700 V
Collector-Emitter Voltage
V
CEO
400 V
Emitter-Base Voltage
V
EBO
9 V
Collector Current
DC
I
C
1.5
A
Pulse
I
CP
3
Base Current
I
B
0.75 A
Collector Power Dissipation
(Tc=25
)
P
C
20 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Emitter Cut-off Current
I
EBO
VEB=9V, IC=0
- - 10
A
DC Current Gain
hFE(1) VCE=2V, IC=0.5A
8 - 40
hFE(2) VCE=2V, IC=1A
5 - 25
Collector-Emitter
Saturation Voltage
V
CE(sat)
IC=0.5A, IB=0.1A
- - 0.5
V
IC=1A, IB=0.25A
- - 1
IC=1.5A, IB=0.5A
- - 3
Base-Emitter
Saturation Voltage
V
BE(sat)
IC=0.5A, IB=0.1A
- - 1
V
IC=1A, IB=0.25A
- - 1.2
Collector Output Capacitance
C
ob
VCB=10V, f=0.1MHz, IE=0
- 21 - pF
Transition Frequency
f
T
VCE=10V, IC=0.1A
4 - - MHz
Turn-On Time
t
on
- - 1.1
S
Storage Time
t
stg
- - 4.0
S
Fall Time
t
f
- - 0.7
S
A
B
C
H
J
K
M
N
1
23
D
E
F
G
L
O
P
1. EMITTER
2. COLLECTOR
3. BASE
TO-126
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
_
+
Φ3.2 0.1
3.5
_
+
11.0 0.3
2.9 MAX
1.0 MAX
1.9 MAX
_
+
0.75 0.15
_
+
15.50 0.5
_
+
2.3 0.1
_
+
0.65 0.15
1.6
3.4 MAX
300µS
I
B1
I =I =0.2A
B2
B1
DUTY CYCLE
I
B2
<
2%
=
INPUT
I
I
OUTPUT
B1
B2
125Ω
V =125V
CC
2003. 7. 24 2/2
MJE13003
Revision No : 7
FE
100
V - IDC CURRENT GAIN
BE(sat) C
COMMON EMITTER
V =2V
50
30
T =150 C
j
T =25 C
j
CE
1.4
1.2
V @I /I =3
BE(sat)
V @V =2V
BE(on)
B
C
CE
T =-55 C
10
j
5
3
DC CURRENT GAIN h
1
0.01
0.03 0.1 0.3 1 2
COLLECTOR CURRENT I (A)
V - I
CE(sat) C
0.35
COMMON
EMITTER
0.30
I /I =3
C
B
0.25
0.20
CE(sat)
0.15
T =150 C
0.10
VOLTAGE V (V)
0.05
COLLECTOR-EMITTER SATURATION
0
0.01
T =25 C
j
0.03 0.1 0.3 1 2
j
COLLECTOR CURRENT I (A)
T =-55 C
j
1
T =-55 C
j
BE(sat)
0.8
V (V)
0.6
BASE-EMITTER VOLTAGE
T =25 C
j
T =25 C
j
T =150 C
j
0.4
0.01
C
0.03 0.1 0.3 1 2
COLLECTOR CURRENT I (A)
C
SWITCHING CHARACTERISTIC
10
5
t
stg
3
1
0.5
t
0.3
SWITCHING TIME (µs)
f
0.1
0.01
C
0.03 0.3 1 2
COLLECTOR CURRENT I (A)
0.1
V =125V
CC
I /I =5
B
C
C
P - Ta
C
25
20
C
15
10
3
C
1
SAFE OPERATING AREA
I MAX.(PULSED)
C
(DC)
*
5mS
1mS
*
100µS
*
10µS
*
*
0.3
10
0.1
SINGLE NONREPETITIVE
*
5
POWER DISSIPATION P (W)
0
0
50 100 150 200
0.03
COLLECTOR CURRENT I (A)
0.01
AMBIENT TEMPERATURE Ta ( C)
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
1
310 301003001
COLLECTOR EMITTER VOLTAGE V (V)
CE