KEC MJD117L, MJD117 Datasheet
2003. 3. 27 1/2
SEMICONDUCTOR
TECHNICAL DATA
MJD117/L
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 4
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES
High DC Current Gain.
: h
FE
=1000(Min.), VCE=-4V, IC=-1A.
Low Collector-Emitter Saturation Voltage.
Straight Lead (IPAK, "L" Suffix)
Complementary to MJD112/L.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Sustaining Voltage
V
CEO(SUS)
IC=-30mA, IB=0
-100 - - V
Collector Cut-off Current
I
CEO
VCE=-50V, IB=0
- - -20
A
I
CBO
VCB=-100V, IE=0
- - -20
Emitter Cut-off Current
I
EBO
VEB=-5V, IC=0
- - -2 mA
DC Current Gain
h
FE
VCE=-3V, IC=-0.5A
500 - -
VCE=-3V, IC=-2A
1,000 12,000 -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-2A, IB=-8mA
- - -2.0 V
Base-Emitter On Voltage
V
BE(ON)
VCE=-3V, IC=-2A
- - -2.8 V
Current Gain Bandwidth Product
f
T
VCE=-10V, IC=0.75A, f=1MHz
25 - - MHz
Collector Output Capacitance
C
ob
VCB=-10V, IE=0, f=0.1MHz
- - 200 pF
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-100 V
Collector-Emitter Voltage
V
CEO
-100 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
DC
I
C
-2
A
Pulse -4
Base Current DC
I
B
-50 mA
Collector Power
Dissipation
Ta=25
P
C
1.0
W
Tc=25
20
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
B
C
Q
H
F
123
1. BASE
2. COLLECTOR
3. EMITTER
A
C
K
F
D
B
E
I
M
P
DPAK
J
O
L
DIM MILLIMETERS
A
B
C
D
E
F
H
I
J
K
L
_
+
6.60 0.2
_
6.10 0.2
+
_
5.0 0.2
+
_
1.10 0.2
+
_
2.70 0.2
+
_
+
2.30 0.1
1.00 MAX
_
+
2.30 0.2
_
+
0.5 0.1
_
+
2.00 0.20
_
+
0.50 0.10
_
+
0.91 0.10M
_
+
0.90 0.1O
_
+
1.00 0.10P
0.95 MAXQ
I
J
D
B
K
E
P
L
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 2.0 0.2
L
P
Q
_
+
6.60 0.2
_
+
6.10 0.2
_
+
5.0 0.2
_
+
1.10 0.2
_
+
9.50 0.6
_
+
2.30 0.1
_
+
0.76 0.1
1.0 MAX
_
+
2.30 0.2
_
+
0.5 0.1
_
+
_
+
0.50 0.1
_
+
1.0 0.1
0.90 MAX
Q
H
G
A
C
F
F
123
R
1
= =
10kΩ
R
2
0.6kΩ
E
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
2003. 3. 27 2/2
MJD117/L
Revision No : 4
5k
V =-3V
CE
3k
FE
1k
500
300
DC CURRENT GAIN h
100
50
COLLECTOR CURRENT I (mA)
500
300
ob
100
h - I
FE C
-0.3-0.1-0.03-0.01
C - V
C
CBob
-1 -3 -5
-10
-5
-3
BE(sat)
-1
-0.5
CE(sat)
-0.3
V , V (V)
SATURATION VOLTAGE
-0.1
-0.03-0.01 -0.1
COLLECTOR CURRENT I (A)
25
1
20
C
15
V , V - I
CE(sat) C
V
BE(sat)
V
CE(sat)
BE(sat)
-0.3 -1 -3 -5
P - Ta
C
I /I =250
C
C
Tc=25 C
1
2
Ta=25 C
B
50
30
CAPACITANCE C (pF)
10
-0.1 -0.3 -1 -3 -10 -30 -50
COLLECTOR-BASE VOLTAGE V (V)
SAFE OPERATING AREA
-10
I MAX.(PULSED) *
C
-5
I MAX.
-3
C
-1
-0.5
-0.3
-0.1
-0.05
-0.03
-0.01
(CONTINUOUS)
DC OPERATION
Tc=25 C
SINGLE NONREPETIVE
*
PULSE Tc=25 C
CURVES MUST BE DREATED
LINEARLY WITH INCREASE
IN TEMPERATURE
-1
-3 -10 -30 -100 -200
1mS*
5mS*
COLLECTOR-EMITTER VOLTAGE V (V)
C
COLLECTOR CURRENT I (A)
500µS*
CB
100µS*
CE
10
5
POWER DISSIPATION P (W)
2
0
0
50 100 150 200
CASE TEMPERATURE Ta ( C)
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