KEC MJD112, MJD112L Datasheet

2003. 3. 27 1/2

SEMICONDUCTOR

TECHNICAL DATA

MJD112/L

EPITAXIAL PLANAR NPN TRANSISTOR

Revision No : 4

MONOLITHIC CONSTRUCTION WITH BUILT IN

BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.

FEATURES

High DC Current Gain.

: h

FE

=1000(Min.), VCE=4V, IC=1A.

Low Collector-Emitter Saturation Voltage.

Straight Lead (IPAK, "L" Suffix)

Complementary to MJD117/L.

MAXIMUM RATING (Ta=25 )

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Collector-Emitter Sustaining Voltage

V

CEO(SUS)

IC=30mA, IB=0

100 - - V

Collector Cut-off Current

I

CEO

VCE=50V, IB=0

- - 20 A

I

CBO

VCB=100V, IE=0

- - 20

Emitter Cut-off Current

I

EBO

VEB=5V, IC=0

- - 2 mA

DC Current Gain

h

FE

VCE=3V, IC=0.5A

500 - -

VCE=3V, IC=2A

1,000 12,000 -

Collector-Emitter Saturation Voltage

V

CE(sat)

IC=2A, IB=8mA

- - 2.0 V

Base-Emitter On Voltage

V

BE(ON)

VCE=3V, IC=2A

- - 2.8 V

Current Gain Bandwidth Product

f

T

VCE=10V, IC=0.75A, f=1MHz

25 - - MHz

Collector Output Capacitance

C

ob

VCB=10V, IE=0, f=0.1MHz

- - 100 pF

CHARACTERISTIC SYMBOL RATING UNIT

Collector-Base Voltage

V

CBO

100 V

Collector-Emitter Voltage

V

CEO

100 V

Emitter-Base Voltage

V

EBO

5 V

Collector Current

DC

I

C

2

A

Pulse 4

Base Current DC

I

B

50 mA

Collector Power

Dissipation

Ta=25

P

C

1.0 W

Tc=25

20

Junction Temperature

T

j

150

Storage Temperature Range

T

stg

-55 150

B

C

Q

H

F

123

1. BASE

2. COLLECTOR

3. EMITTER

A

C

K

F

D

B

E

I

M

P

DPAK

J

O

L

DIM MILLIMETERS

A

B

C

D

E F

H

I J

K

L

_

+

6.60 0.2 _

6.10 0.2

+

_

5.0 0.2

+

_

1.10 0.2

+ _

2.70 0.2

+ _

+

2.30 0.1

1.00 MAX _

+

2.30 0.2 _

+

0.5 0.1 _

+

2.00 0.20 _

+

0.50 0.10

_

+

0.91 0.10M

_

+

0.90 0.1O _

+

1.00 0.10P

0.95 MAXQ

I

J

D

B

K

E

P

L

DIM MILLIMETERS

A

B

C

D

E

F

G

H

I

J

K 2.0 0.2

L

P

Q

_

+

6.60 0.2

_

+

6.10 0.2

_

+

5.0 0.2

_

+

1.10 0.2

_

+

9.50 0.6

_

+

2.30 0.1

_

+

0.76 0.1

1.0 MAX

_

+

2.30 0.2

_

+

0.5 0.1

_

+

_

+

0.50 0.1

_

+

1.0 0.1

0.90 MAX

Q

H

G

A C

F

F

123

R

1

= =

10kΩ

R

2

0.6kΩ E

1. BASE

2. COLLECTOR

3. EMITTER

IPAK

2003. 3. 27 2/2

MJD112/L

Revision No : 4

10k

V =3V

CE

5k

FE

3k

1k

500

300

DC CURRENT GAIN h

100

0.01 0.03 0.1 0.3

COLLECTOR CURRENT I (A)

200

100

ob

50

h - I

FE C

C - V

135

C

CBob

f=0.1MHz

10

5

3

BE(sat)

1

0.5

CE(sat)

0.3

V , V (V)

SATURATION VOLTAGE

0.1

0.030.01 0.1

COLLECTOR CURRENT I (A)

25

1

20

C

15

V ,V - I

CE(sat) C

V

BE(sat)

V

CE(sat)

BE(sat)

0.3 1 3 5

P - Ta

C

C

Tc=25 C

1

2

Ta=25 C

I /I =250

B

C

30

CAPACITANCE C (pF)

10

COLLECTOR-BASE VOLTAGE V (V)

SAFE OPERATING AREA

10

I MAX.(PULSED) *

C

5

I MAX.

C

3

C

COLLECTOR CURRENT I (A)

(CONTINUOUS)

DC OPERATION Tc=25 C

1

0.5

0.3

0.1

SINGLE NONREPETIVE

*

0.05

0.03

PULSE Tc=25 C

CURVES MUST BE DREATED LINEARLY WITH INCREASE IN TEMPERATURE

0.01 1

3 10 30 100 200

COLLECTOR-EMITTER VOLTAGE V (V)

510

1

mS*

5mS*

CB

100

µS*

CE

10

5

POWER DISSIPATION P (W)

2

0

503031

0

50 100 150 200

CASE TEMPERATURE Ta ( C)

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