KEC KTX402U Datasheet
2003. 3. 11 1/4
SEMICONDUCTOR
TECHNICAL DATA
KTX402U
EPITAXIAL PLANAR NPN TRANSISTOR
SCHOTTKY BARRIER TYPE DIODE
Revision No : 1
GENERAL PURPOSE APPLICATION.
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Including two(TR, Diode) devices in USV.
(Ultra Super Mini type with 5 leads)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
MAXIMUM RATINGS (Ta=25 )
EQUIVALENT CIRCUIT (TOP VIEW)
MARK SPEC
Marking
Type
KTX402U KTX402U
Q1hFERank : Y Q1hFERank : GR
Mark CG CJ
TRANSISTOR Q
1
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
50 V
Emitter-Base Voltage
V
EBO
5
Collector Current
I
C
150
Emitter Current
I
B
30
Collector Power Dissipation
P
C
100
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55~125
DIODE (SBD) D
1
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage
V
RM
30 V
Reverse Voltage
V
R
30 V
Maximum (Peak) Forward Current
I
FM
300
Average Forward Current
I
O
200
Surge Current (10mS)
I
FSM
1 A
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-55 125
54
Type Name
45
B
B1
1
C
2
A
A1
C
3
H
G
5
D
4
T
DIM MILLIMETERS
A
B
B1
C
D
G
H
T
_
+
2.00 0.20
_
+
1.3 0.1A1
_
+
2.1 0.1
_
+
1.25 0.1
0.65
0.2+0.10/-0.05
0-0.1
_
0.9 0.1
+
0.15+0.1/-0.05
D1 Q1
1
23
CG
12 3
1. D ANODE
1
2. Q BASE
1
3. Q EMITTER
1
4. Q COLLECTOR
1
5. D CATHODE
1
USV
2003. 3. 11 2/4
KTX402U
Revision No : 1
Note) hFEClassification Y:120~240, GR:200~400.
ELECTRICAL CHARACTERISTICS (Ta=25 )
TRANSISTOR Q
1
DIODE (SBD) D
1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=60V, IE=0
- - 0.1
Emitter Cut-off Current
I
EBO
VEB=5V, IC=0
- - 0.1
DC Current Gain
h
FE
(Note)
VCE=6V, IC=2
120 - 400
Collector-Emitter Saturation Voltage
V
CE(SAT)
IC=100 , IB=10
- 0.1 0.25 V
Transition Frequency
f
T
VCE=10V, IC=1
80 - -
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1
- 2.0 3.5
Noise Figure NF
VCE=6V, IC=0.1 , f=1 , Rg=10
- 1.0 10 dB
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
V
F(1)
IF=1mA
- 0.22 -
V
V
F(2)
IF=10mA
- 0.29 -
V
F(3)
IF=100mA
- 0.38 -
V
F(4)
IF=200mA
- 0.43 0.55
Reverse Current
I
R
VR=30V
- - 50
Total Capacitance
C
T
VR=0, f=1
- 50 -
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